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Journal: Materials, 2018
Volume: 11
Number: 824
Article:
Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment
Authors:
by
Ching-Lin Fan, Fan-Ping Tseng and Chiao-Yuan Tseng
Link:
https://www.mdpi.com/1996-1944/11/5/824
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