Subsurface Damage in Polishing Process of Silicon Carbide Ceramic
Abstract
:1. Introduction
2. Theoretical Analysis
2.1. SSD Models
2.2. Models of Single-Grit Penetration Depth
2.2.1. The Height Distribution of ABRASIVE Protrusion
2.2.2. The Number of Effective Grains
2.2.3. The Depth of a Single Abrasive Grain
2.3. Analysis for Dynamic Parameters
2.4. Analysis for SSD Depth Models
3. Numerical Simulation
3.1. Constitutive Models
3.2. Simulation Methods
3.3. Simulation Results and Discussion
3.3.1. Analysis for Single-Grit Polishing Process
3.3.2. Effect of Polishing Depth on SSD Depth
3.3.3. Effect of Polishing Speed on SSD Depth
3.3.4. Effect of Abrasive Grain Size on SSD Depth
4. Validation of Experimental Results
4.1. Experimental Preparation
4.2. Experimental Results and Discussion
5. Conclusions
- (1)
- On the basis of the dynamic relationship between the abrasive particles and the workpiece in the theoretical analysis, when , the material removal is mainly brittle fracture. The SSD depth increases as the abrasive grain angle and load (proportional to the polishing depth) increases, and decreases as the speed increases.
- (2)
- In the simulation, the formation and propagation of cracks are presented. The simulation results indicate that the polishing depth, abrasive grain size, and polishing speed have the most significant effect on SSD, respectively. By increasing polishing depth and abrasive grain size, the SSD depth increases, and an increasing polishing speed results in a decrease in SSD depth.
- (3)
- The polishing experiments under different processing parameters are carried out. The experimental results validate the theoretical and simulation results.
Acknowledgments
Author Contributions
Conflicts of Interest
References
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M (Mesh Size) | (μm) | (μm) | σ (μm) |
---|---|---|---|
180 | 84.4 | 47.3 | 12.4 |
320 | 47.5 | 21.1 | 8.8 |
400 | 38.0 | 15.5 | 7.5 |
600 | 25.3 | 8.8 | 5.5 |
800 | 19.0 | 5.9 | 4.4 |
1000 | 15.2 | 4.3 | 3.6 |
1500 | 10.1 | 2.4 | 2.6 |
2000 | 7.6 | 1.6 | 2.0 |
4000 | 3.8 | 0.6 | 1.1 |
6000 | 2.5 | 0.35 | 0.7 |
10,000 | 1.5 | 0.17 | 0.4 |
Material Properties Parameters | Value |
---|---|
Density ρ (kg/m3) | 3215 |
Elastic modulus E (GPa) | 454 |
Poisson’s ratio | 0.25 |
Yield strength σ (MPa) | 620 |
Specific heat [J/(kg·K)] | 526.3 |
Conductivity [W/(m·K)] | 180 |
Hardness (GPa) | 29.4 |
Constitutive Model | A | N | B | M | C | ||
3215 | 193 | 0.96 | 0.65 | 0.35 | 1.0 | 0.009 | |
β | |||||||
12.2 | 1.3 | 11.7 | 5.13 | 1.0 | 1.0 | 0.75 | |
β | |||||||
1.0 | 220 | 361 | 0 | ||||
Failure Model | FS | Damage | |||||
0.48 | 0.48 | 1.2 | 0.0 | 0.2 | 0 |
Polishing Parameters | Value |
---|---|
Polishing depth ap (μm) | 1, 2, 3, 4 |
Polishing speed Vs (mm/s) | 523, 733, 1151, 1364 |
Abrasive grain size h (μm) | 5, 6, 7, 8 |
Test | Polishing Depth ap (μm) | Polishing Speed Vs (mm/s) | Abrasive Grain Size | Predicted SSD (μm) | Measured SSD (μm) |
---|---|---|---|---|---|
1 | 1 | 2600 | W 0.5 | 1.697 | 1.515 |
2 | 2 | 2600 | W 0.5 | 3.110 | 2.231 |
3 | 3 | 2600 | W 0.5 | 5.340 | 3.961 |
4 | 4 | 2600 | W 0.5 | 7.834 | 5.113 |
5 | 1 | 1000 | W 0.5 | 2.804 | 4.212 |
6 | 1 | 1400 | W 0.5 | 2.102 | 3.116 |
7 | 1 | 2200 | W 0.5 | 1.898 | 2.176 |
9 | 1 | 2600 | W 1.5 | 3.844 | 2.325 |
10 | 1 | 2600 | W 2.5 | 5.398 | 2.987 |
11 | 1 | 2600 | W 3.5 | 6.697 | 3.857 |
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Gu, Y.; Zhu, W.; Lin, J.; Lu, M.; Kang, M. Subsurface Damage in Polishing Process of Silicon Carbide Ceramic. Materials 2018, 11, 506. https://doi.org/10.3390/ma11040506
Gu Y, Zhu W, Lin J, Lu M, Kang M. Subsurface Damage in Polishing Process of Silicon Carbide Ceramic. Materials. 2018; 11(4):506. https://doi.org/10.3390/ma11040506
Chicago/Turabian StyleGu, Yan, Wenhui Zhu, Jieqiong Lin, Mingming Lu, and Mingshuo Kang. 2018. "Subsurface Damage in Polishing Process of Silicon Carbide Ceramic" Materials 11, no. 4: 506. https://doi.org/10.3390/ma11040506