Wang, W.; Bai, L.; Yang, C.; Fan, K.; Xie, Y.; Li, M.
The Electronic Properties of O-Doped Pure and Sulfur Vacancy-Defect Monolayer WS2: A First-Principles Study. Materials 2018, 11, 218.
https://doi.org/10.3390/ma11020218
AMA Style
Wang W, Bai L, Yang C, Fan K, Xie Y, Li M.
The Electronic Properties of O-Doped Pure and Sulfur Vacancy-Defect Monolayer WS2: A First-Principles Study. Materials. 2018; 11(2):218.
https://doi.org/10.3390/ma11020218
Chicago/Turabian Style
Wang, Weidong, Liwen Bai, Chenguang Yang, Kangqi Fan, Yong Xie, and Minglin Li.
2018. "The Electronic Properties of O-Doped Pure and Sulfur Vacancy-Defect Monolayer WS2: A First-Principles Study" Materials 11, no. 2: 218.
https://doi.org/10.3390/ma11020218
APA Style
Wang, W., Bai, L., Yang, C., Fan, K., Xie, Y., & Li, M.
(2018). The Electronic Properties of O-Doped Pure and Sulfur Vacancy-Defect Monolayer WS2: A First-Principles Study. Materials, 11(2), 218.
https://doi.org/10.3390/ma11020218