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Materials 2018, 11(12), 2562; https://doi.org/10.3390/ma11122562

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

1
Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
2
The School of Mathematics and Statistics, Xidian University, Xi’an 710071, China
*
Authors to whom correspondence should be addressed.
Received: 16 November 2018 / Revised: 10 December 2018 / Accepted: 14 December 2018 / Published: 17 December 2018
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Abstract

The transition-metal chalcogenides (TMDs) are gaining increased attention from many scientists recently. Monolayer MoS2 is an emerging layered TMD material with many excellent physical and electrical properties. It can be widely used in catalysis, transistors, optoelectronics and integrated circuits. Here, the large-sized monolayer MoS2 is grown on the silicon substrate with a 285-nm-thick oxide layer by atmospheric pressure chemical vapor deposition (APCVD) of sulfurized molybdenum trioxide. This method is simple and it does not require vacuum treatment. In addition, the effects of growth conditions, such as sulfur source, molybdenum source, growth temperature, and argon flow rate on the quality and area of MoS2 are further studied systematically. These analysis results help to master the morphology and optical properties of monolayer MoS2. The high quality, excellent performance, and large-size monolayer MoS2 under the optimal growth condition is characterized by optical microscopy, AFM, XPS, photoluminescence, and Raman spectroscopy. The Raman spectrum and PL mapping show that the grown MoS2 is a uniform triangular monolayer with a side length of 100 μm, which can pave the way for the applications of photodetectors and transistors. View Full-Text
Keywords: monolayer MoS2; APCVD; Raman spectrum; growth condition; PL spectrum monolayer MoS2; APCVD; Raman spectrum; growth condition; PL spectrum
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Han, T.; Liu, H.; Wang, S.; Li, W.; Chen, S.; Yang, X.; Cai, M. Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD. Materials 2018, 11, 2562.

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