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Materials 2018, 11(1), 47;

Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application

Fert Beijing Research Institute, School of Electrical and Information Engineering, Big Data and Brain Computing Center (BDBC), Beihang University, Beijing 100191, China
Beihang-Geortek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
Institut Jean Lamour, CNRS UMR 7198, Université de Lorraine, 54506 Vandœuvre-lès-Nancy, France
Authors to whom correspondence should be addressed.
Received: 19 November 2017 / Revised: 16 December 2017 / Accepted: 16 December 2017 / Published: 28 December 2017
(This article belongs to the Special Issue Magnetoresistance Effects and Their Application to Spintronic Devices)
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The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect. View Full-Text
Keywords: spintronics; magnetoresistance effect; optically tunable; interlayer exchange coupling; data storage spintronics; magnetoresistance effect; optically tunable; interlayer exchange coupling; data storage

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Liu, P.; Lin, X.; Xu, Y.; Zhang, B.; Si, Z.; Cao, K.; Wei, J.; Zhao, W. Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application. Materials 2018, 11, 47.

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