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Open AccessArticle

NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics

Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Korea
Author to whom correspondence should be addressed.
Materials 2018, 11(1), 37;
Received: 25 October 2017 / Revised: 14 December 2017 / Accepted: 23 December 2017 / Published: 27 December 2017
(This article belongs to the Special Issue Zinc Oxide Nanostructures: Synthesis and Characterization)
Previous studies on Ga-doped ZnO nanorods (GZRs) have failed to address the change in GZR morphology with increased doping concentration. The morphology-change affects the GZR surface-to-volume ratio and the real essence of doping is not exploited for heterostructure optoelectronic characteristics. We present NH4OH treatment to provide an optimum morphological trade-off to n-GZR/p-Si heterostructure characteristics. The GZRs were grown via one of the most eminent and facile hydrothermal method with an increase in Ga concentration from 1% to 5%. The supplementary OH ion concentration was effectively controlled by the addition of an optimum amount of NH4OH to synchronize GZR aspect and surface-to-volume ratio. Hence, the probed results show only the effects of Ga-doping, rather than the changed morphology, on the optoelectronic characteristics of n-GZR/p-Si heterostructures. The doped nanostructures were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, photoluminescence, Hall-effect measurement, and Keithley 2410 measurement systems. GZRs had identical morphology and dimensions with a typical wurtzite phase. As the GZR carrier concentration increased, the PL response showed a blue shift because of Burstein-Moss effect. Also, the heterostructure current levels increased linearly with doping concentration. We believe that the presented GZRs with optimized morphology have great potential for field-effect transistors, light-emitting diodes, ultraviolet sensors, and laser diodes. View Full-Text
Keywords: ZnO; nanorod; Ga; doping; heterostructure; optoelectronics; hydrothermal ZnO; nanorod; Ga; doping; heterostructure; optoelectronics; hydrothermal
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Rana, A.U.H.S.; Kim, H.-S. NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics. Materials 2018, 11, 37.

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