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Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Department of Electric and Electronic Engineering, Kinki University, Higashi-Osaka 577-8502, Japan
Materials 2017, 10(8), 875; https://doi.org/10.3390/ma10080875
Received: 8 June 2017 / Revised: 18 July 2017 / Accepted: 25 July 2017 / Published: 28 July 2017
Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01−1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1−11] and [11−1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects. View Full-Text
Keywords: GaInP; AlGaInP; epitaxial layer; metal organic chemical vapor deposition; misorientaion substrate; ordering structure; disordering structure; photoluminescence; strain compensated quantum well; semiconductor laser diode; light emitting diode; quantum dots; InAlAs; InP; InAs; GaAs(N); GaAs; InGaAs; GaAsP; thermal resistance GaInP; AlGaInP; epitaxial layer; metal organic chemical vapor deposition; misorientaion substrate; ordering structure; disordering structure; photoluminescence; strain compensated quantum well; semiconductor laser diode; light emitting diode; quantum dots; InAlAs; InP; InAs; GaAs(N); GaAs; InGaAs; GaAsP; thermal resistance
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Hamada, H. Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode. Materials 2017, 10, 875.

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