Noviyana, I.; Lestari, A.D.; Putri, M.; Won, M.-S.; Bae, J.-S.; Heo, Y.-W.; Lee, H.Y.
High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide. Materials 2017, 10, 702.
https://doi.org/10.3390/ma10070702
AMA Style
Noviyana I, Lestari AD, Putri M, Won M-S, Bae J-S, Heo Y-W, Lee HY.
High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide. Materials. 2017; 10(7):702.
https://doi.org/10.3390/ma10070702
Chicago/Turabian Style
Noviyana, Imas, Annisa Dwi Lestari, Maryane Putri, Mi-Sook Won, Jong-Seong Bae, Young-Woo Heo, and Hee Young Lee.
2017. "High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide" Materials 10, no. 7: 702.
https://doi.org/10.3390/ma10070702
APA Style
Noviyana, I., Lestari, A. D., Putri, M., Won, M.-S., Bae, J.-S., Heo, Y.-W., & Lee, H. Y.
(2017). High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide. Materials, 10(7), 702.
https://doi.org/10.3390/ma10070702