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Effects of UV-Ozone Treatment on Sensing Behaviours of EGFETs with Al2O3 Sensing Film

State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China
School of Information Science and Technology, Fudan University, Shanghai 200433, China
Authors to whom correspondence should be addressed.
Materials 2017, 10(12), 1432;
Received: 22 October 2017 / Revised: 23 November 2017 / Accepted: 13 December 2017 / Published: 15 December 2017
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The effects of UV-ozone (UVO) treatment on the sensing behaviours of extended-gate field-effect transistors (EGFETs) that use Al2O3 as the sensing film have been investigated. The Al2O3 sensing films are UVO-treated with various duration times and the corresponding EGFET sensing behaviours, such as sensitivity, hysteresis, and long-term stability, are electrically evaluated under various measurement conditions. Physical analysis is also performed to characterize the surface conditions of the UVO-treated sensing films using X-ray photoelectron spectroscopy and atomic force microscopy. It is found that UVO treatment effectively reduces the buried sites in the Al2O3 sensing film and subsequently results in reduced hysteresis and improved long-term stability of EGFET. Meanwhile, the observed slightly smoother Al2O3 film surface post UVO treatment corresponds to decreased surface sites and slightly reduced pH sensitivity of the Al2O3 film. The sensitivity degradation is found to be monotonically correlated with the UVO treatment time. A treatment time of 10 min is found to yield an excellent performance trade-off: clearly improved long-term stability and reduced hysteresis at the cost of negligible sensitivity reduction. These results suggest that UVO treatment is a simple and facile method to improve the overall sensing performance of the EGFETs with an Al2O3 sensing film. View Full-Text
Keywords: EGFETs; Al2O3; pH sensing; instability; UV-ozone EGFETs; Al2O3; pH sensing; instability; UV-ozone

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Sun, C.; Zeng, R.; Zhang, J.; Qiu, Z.-J.; Wu, D. Effects of UV-Ozone Treatment on Sensing Behaviours of EGFETs with Al2O3 Sensing Film. Materials 2017, 10, 1432.

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