Rigaud-Minet, F.; Raynaud, C.; Buckley, J.; Charles, M.; Pimenta-Barros, P.; Gwoziecki, R.; Gillot, C.; Sousa, V.; Morel, H.; Planson, D.
Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes. Energies 2023, 16, 599.
https://doi.org/10.3390/en16020599
AMA Style
Rigaud-Minet F, Raynaud C, Buckley J, Charles M, Pimenta-Barros P, Gwoziecki R, Gillot C, Sousa V, Morel H, Planson D.
Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes. Energies. 2023; 16(2):599.
https://doi.org/10.3390/en16020599
Chicago/Turabian Style
Rigaud-Minet, Florian, Christophe Raynaud, Julien Buckley, Matthew Charles, Patricia Pimenta-Barros, Romain Gwoziecki, Charlotte Gillot, Véronique Sousa, Hervé Morel, and Dominique Planson.
2023. "Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes" Energies 16, no. 2: 599.
https://doi.org/10.3390/en16020599
APA Style
Rigaud-Minet, F., Raynaud, C., Buckley, J., Charles, M., Pimenta-Barros, P., Gwoziecki, R., Gillot, C., Sousa, V., Morel, H., & Planson, D.
(2023). Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes. Energies, 16(2), 599.
https://doi.org/10.3390/en16020599
