Ściana, B.; Dawidowski, W.; Radziewicz, D.; Jadczak, J.; López-Escalante, M.C.; González de la Cruz, V.; Gabás, M.
Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE. Energies 2022, 15, 3036.
https://doi.org/10.3390/en15093036
AMA Style
Ściana B, Dawidowski W, Radziewicz D, Jadczak J, López-Escalante MC, González de la Cruz V, Gabás M.
Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE. Energies. 2022; 15(9):3036.
https://doi.org/10.3390/en15093036
Chicago/Turabian Style
Ściana, Beata, Wojciech Dawidowski, Damian Radziewicz, Joanna Jadczak, Mari Cruz López-Escalante, Victor González de la Cruz, and Mercedes Gabás.
2022. "Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE" Energies 15, no. 9: 3036.
https://doi.org/10.3390/en15093036
APA Style
Ściana, B., Dawidowski, W., Radziewicz, D., Jadczak, J., López-Escalante, M. C., González de la Cruz, V., & Gabás, M.
(2022). Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE. Energies, 15(9), 3036.
https://doi.org/10.3390/en15093036