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Journal: Energies, 2022
Volume: 15
Number: 6960

Article: High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
Authors: by Jaeyeop Na, Minju Kim and Kwangsoo Kim
Link: https://www.mdpi.com/1996-1073/15/19/6960

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