Kavaliauskas, Ž.; Dovydaitis, V.; Kėželis, R.; Marcinauskas, L.; Valinčius, V.; Baltušnikas, A.; Iljinas, A.; Gecevičius, G.; Čapas, V.
Formation of Graphite-Copper/N-Silicon Schottky Photovoltaic Diodes Using Different Plasma Technologies. Energies 2021, 14, 6896.
https://doi.org/10.3390/en14216896
AMA Style
Kavaliauskas Ž, Dovydaitis V, Kėželis R, Marcinauskas L, Valinčius V, Baltušnikas A, Iljinas A, Gecevičius G, Čapas V.
Formation of Graphite-Copper/N-Silicon Schottky Photovoltaic Diodes Using Different Plasma Technologies. Energies. 2021; 14(21):6896.
https://doi.org/10.3390/en14216896
Chicago/Turabian Style
Kavaliauskas, Žydrūnas, Vilius Dovydaitis, Romualdas Kėželis, Liutauras Marcinauskas, Vitas Valinčius, Arūnas Baltušnikas, Aleksandras Iljinas, Giedrius Gecevičius, and Vytautas Čapas.
2021. "Formation of Graphite-Copper/N-Silicon Schottky Photovoltaic Diodes Using Different Plasma Technologies" Energies 14, no. 21: 6896.
https://doi.org/10.3390/en14216896
APA Style
Kavaliauskas, Ž., Dovydaitis, V., Kėželis, R., Marcinauskas, L., Valinčius, V., Baltušnikas, A., Iljinas, A., Gecevičius, G., & Čapas, V.
(2021). Formation of Graphite-Copper/N-Silicon Schottky Photovoltaic Diodes Using Different Plasma Technologies. Energies, 14(21), 6896.
https://doi.org/10.3390/en14216896
