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Open AccessArticle

ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

1
School of Electrical and Computer Engineering, Pusan National University, Geumjeong-gu, Busan 46241, Korea
2
Department of Energy Engineering, Inje University, 197 Inje-ro, Gimhae-si, Gyeongsangnamdo 50834, Korea
3
Department of Electronics, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
*
Author to whom correspondence should be addressed.
Energies 2018, 11(8), 1931; https://doi.org/10.3390/en11081931
Received: 5 July 2018 / Revised: 13 July 2018 / Accepted: 20 July 2018 / Published: 24 July 2018
(This article belongs to the Section Energy Fundamentals and Conversion)
Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime. View Full-Text
Keywords: QDSSCs; Charge recombination; ZnS/SiO2; Passivation layer QDSSCs; Charge recombination; ZnS/SiO2; Passivation layer
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MDPI and ACS Style

Kim, H.-J.; Bae, J.-H.; Seo, H.; Shiratani, M.; Venkata Veera Muralee Gopi, C. ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells. Energies 2018, 11, 1931.

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