Next Article in Journal
Quantitative Assessment of Desertification Using Landsat Data on a Regional Scale – A Case Study in the Ordos Plateau, China
Next Article in Special Issue
A High Resolution Color Image Restoration Algorithm for Thin TOMBO Imaging Systems
Previous Article in Journal
Humidity Sensitivity of Multi-Walled Carbon Nanotube Networks Deposited by Dielectrophoresis
Previous Article in Special Issue
CMOS Image Sensors for High Speed Applications
Article Menu

Export Article

Open AccessArticle
Sensors 2009, 9(3), 1722-1737;

CMOS Image Sensor with a Built-in Lane Detector

Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung, Taiwan, ROC
Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, ROC
Department of Computer and Communication Engineering, National Kaohsiung First University of Science and Technology, Kaohsiung, Taiwan, ROC
Department of Computer Science and Information Engineering, National Taiwan University, Taipei, Taiwan, ROC
Author to whom correspondence should be addressed.
Received: 16 February 2009 / Revised: 8 March 2009 / Accepted: 11 March 2009 / Published: 12 March 2009
(This article belongs to the Special Issue Image Sensors 2009)
Full-Text   |   PDF [1105 KB, uploaded 21 June 2014]


This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS) imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC) based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC) or Digital Signal Processor (DSP), the proposed imager, without extra Analog to Digital Converter (ADC) circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 x 2,389.8 mm, and the package uses 40 pin Dual-In-Package (DIP). The pixel cell size is 18.45 x 21.8 mm and the core size of photodiode is 12.45 x 9.6 mm; the resulting fill factor is 29.7%. View Full-Text
Keywords: Image sensor; CMOS; photodiode; current-mode; lane detection; peak-finding algorithm; Gaussian filter; intelligent transportation systems Image sensor; CMOS; photodiode; current-mode; lane detection; peak-finding algorithm; Gaussian filter; intelligent transportation systems
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Share & Cite This Article

MDPI and ACS Style

Hsiao, P.-Y.; Cheng, H.-C.; Huang, S.-S.; Fu, L.-C. CMOS Image Sensor with a Built-in Lane Detector. Sensors 2009, 9, 1722-1737.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top