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Sensors 2008, 8(4), 2662-2672;

CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials

Department of Electronic Engineering, Kyungnam University, Masan, Kyungnam 631-701, Korea
Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106, USA
Intel Corporation, Hillsboro, OR 97124, USA
Author to whom correspondence should be addressed.
Received: 12 February 2008 / Accepted: 10 April 2008 / Published: 14 April 2008
Full-Text   |   PDF [2115 KB, uploaded 21 June 2014]


An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx film on Si3N4/Si substrate, plasma etching is performed to the gate area as well as trenches. CNx film is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 ㎂/%RH. View Full-Text
Keywords: Integrated sensors; Humidity; CMOS; Carbon nitride film Integrated sensors; Humidity; CMOS; Carbon nitride film
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Lee, S.P.; Lee, J.G.; Chowdhury, S. CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials. Sensors 2008, 8, 2662-2672.

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