Order Article Reprints

Yu Z, Han X, Xu J, Chen C, Qu X, Liu B, Sun Z, Sun T. The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO₂/FTO Memory Device. Sensors. 2023; 23(7):3480. https://doi.org/10.3390/s23073480

Yu, Zhiqiang, Xu Han, Jiamin Xu, Cheng Chen, Xinru Qu, Baosheng Liu, Zijun Sun, and Tangyou Sun. 2023. "The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO₂/FTO Memory Device" Sensors 23, no. 7: 3480. https://doi.org/10.3390/s23073480

Yu, Z., Han, X., Xu, J., Chen, C., Qu, X., Liu, B., Sun, Z., & Sun, T. (2023). The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO₂/FTO Memory Device. Sensors, 23(7), 3480. https://doi.org/10.3390/s23073480