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Journal: Sensors, 2022
Volume: 22
Number: 507
Article:
T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process
Authors:
by
Behnam S. Rikan, David Kim, Kyung-Duk Choi, Arash Hejazi, Joon-Mo Yoo, YoungGun Pu, Seokkee Kim, Hyungki Huh, Yeonjae Jung and Kang-Yoon Lee
Link:
https://www.mdpi.com/1424-8220/22/2/507
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