Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers
Onaka-Masada, A.; Kadono, T.; Okuyama, R.; Hirose, R.; Kobayashi, K.; Suzuki, A.; Koga, Y.; Kurita, K. Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers. Sensors 2020, 20, 6620. https://doi.org/10.3390/s20226620
Onaka-Masada A, Kadono T, Okuyama R, Hirose R, Kobayashi K, Suzuki A, Koga Y, Kurita K. Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers. Sensors. 2020; 20(22):6620. https://doi.org/10.3390/s20226620
Chicago/Turabian StyleOnaka-Masada, Ayumi, Takeshi Kadono, Ryosuke Okuyama, Ryo Hirose, Koji Kobayashi, Akihiro Suzuki, Yoshihiro Koga, and Kazunari Kurita. 2020. "Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers" Sensors 20, no. 22: 6620. https://doi.org/10.3390/s20226620