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Open AccessArticle

Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films

1
Grup de Nanomaterials i Microsistemes, Departament de Física, Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
2
Instituto de Microelectrónica de Barcelona—Centre Nacional de Microelectrònica, Campus UAB, Bellaterra, 08193 Barcelona, Spain
*
Author to whom correspondence should be addressed.
This paper is an extension version of the conference paper: “Thermoelectric Microsensor Based on Ultrathin Si films”; Gustavo Gonçalves Dalkiranis, Pablo Ferrando-Villalba, Aitor Lopeandía-Fernández, Llibertat Abad-Muñoz, Javier Rodríguez-Viejo in Proceedings of the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018.
Current address: IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Sensors 2019, 19(6), 1427; https://doi.org/10.3390/s19061427
Received: 13 February 2019 / Revised: 15 March 2019 / Accepted: 19 March 2019 / Published: 22 March 2019
(This article belongs to the Special Issue Eurosensors 2018 Selected Papers)
Ultrathin Si films have a reduced thermal conductivity in comparison to Si bulk due to phonon scattering at the surfaces. Furthermore, the small thickness guarantees a reduced thermal mass (in the µJ/K range), which opens up the possibility of developing thermal sensors with a high sensitivity. Based on these premises, a thermoelectric (TE) microsensor based on ultrathin suspended Si films was developed and used as a thermal photosensor. The photoresponse of the device was evaluated with an argon laser (λ = 457 nm) with a variable power ranging from 0 to 10 mW in air at atmospheric pressure, with laser diodes at 406 nm, 520 nm and 638 nm wavelengths, and fixed powers in high vacuum conditions. The responsivity per unit area, response time (τ) and detectivity (D*) of the device were determined in air at ambient pressure, being 2.6 × 107 V/Wm2, ~4.3 ms and 2.86 × 10 7   c m H z ( 1 / 2 ) W 1 , respectively. Temperature differences up to 30 K between the central hot region and the Si frame were achieved during open-circuit voltage measurements, with and without laser diodes. During illumination, the photogeneration of carriers caused a slight reduction of the Seebeck coefficient, which did not significantly change the sensitivity of the device. Moreover, the measurements performed with light beam chopped at different frequencies evidenced the quick response of the device. The temperature gradients applied to the thermoelectric Si legs were corrected using finite element modeling (FEM) due to the non-flat temperature profile generated during the experiments. View Full-Text
Keywords: photosensor; thermoelectric effect; microsensor photosensor; thermoelectric effect; microsensor
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MDPI and ACS Style

Gonçalves Dalkiranis, G.; Ferrando-Villalba, P.; Lopeandia-Fernández, A.; Abad-Muñoz, L.; Rodríguez-Viejo, J. Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films . Sensors 2019, 19, 1427. https://doi.org/10.3390/s19061427

AMA Style

Gonçalves Dalkiranis G, Ferrando-Villalba P, Lopeandia-Fernández A, Abad-Muñoz L, Rodríguez-Viejo J. Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films . Sensors. 2019; 19(6):1427. https://doi.org/10.3390/s19061427

Chicago/Turabian Style

Gonçalves Dalkiranis, Gustavo; Ferrando-Villalba, Pablo; Lopeandia-Fernández, Aitor; Abad-Muñoz, Llibertat; Rodríguez-Viejo, Javier. 2019. "Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films " Sensors 19, no. 6: 1427. https://doi.org/10.3390/s19061427

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