Electrical Properties of Two-Dimensional Materials Used in Gas Sensors
Abstract
:1. Introduction
2. Two-Dimensional Materials Used in Gas Sensors
2.1. Two-Dimensional Materials for Gas Sensing
2.2. Advantages of Two-Dimensional Materials for Gas Sensing
3. Electronic Band Structure for Two-Dimensional Materials
3.1. First Brillouin Zone of Two-Dimensional Materials
3.1.1. First Brillouin Zone for materials with Hexagonal Crystalline Lattices
3.1.2. First Brillouin Zone for Materials with Orthorhombic Crystalline Lattices
3.1.3. First Brillouin Zone for Materials with Triclinic Crystalline Lattices
3.1.4. First Brillouin Zone for Materials with Monoclinic Crystalline Lattices
3.2. Tight-Binding Model for Two-Dimensional Materials
3.2.1. Band Structure of Graphene
3.2.2. Band Structure of Hexagonal Boron Nitride (h-BN)
3.2.3. Band Structure of Silicene
4. Why Study Electrical Properties of the 2D Materials for Gas Sensors?
4.1. Correlation between Band Gap and/or Electronic Band Structure and Electrical Conductivity
4.2. Correlation between Gas Sensing Characteristics and Electronic Band Structure
5. Conclusions
Funding
Acknowledgments
Conflicts of Interest
References
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Two-Dimensional Material | BAND GAP | Electrical Properties | Crystal Structure | Unit Cell Parameters |
---|---|---|---|---|
Graphene | 0 eV | Metal | Hexagonal | a = b = 0.2612 nm, c = 0.6079 nm, α = β = 90°, γ = 120° |
Germanene | 0.26 eV | Semimetal | Hexagonal | a = b = 0.249 nm, c = 0.268 nm, α = β = 90°, γ = 120° |
Silicene | 0.1 eV | Semimetal | Hexagonal | a = b = 0.382 nm, c = 0.45 nm, α = β = 90°, γ = 120° |
Borophene (striped) | 2 eV | Semimetal | Orthorhombic | a = 0.161, b = 0.286 nm, c = 0.911 nm, α = β = 90°, γ = 120° |
Stanene | 0.074 eV | Semimetal | Hexagonal | a = b = 0.468 nm, c = 0.283 nm, α = β = 90°, γ = 120° |
Aluminene | 1.618 eV | Semiconductor | Hexagonal | a = b = 0.449 nm, c = 0.259 nm, α = β = 90°, γ = 120° |
Bismuthene | 0.8 eV | Semimetal | Hexagonal | a = b = 0.449 nm, c = 0.259 nm, α = β = 90°, γ = 120° |
Antimonene (β phase) | 0.8–1.44 eV | Semimetal/Semiconductor | Hexagonal | a = b = 0.401 nm, c = 0.284 nm, α = β = 90°, γ = 120° |
Two-Dimensional Material | Band Gap | Electrical Properties | Crystal Structure | Unit Cell Parameters |
---|---|---|---|---|
Diarsenic tritelluride As2Te3 (α phase) | 0.2–0.3 eV | Semiconductor (indirect band gap), Topological insulator, Thermoelectric material | Monoclinic C | a = 1.430 nm, b = 0.403 nm, c = 0.986 nm, α = γ = 90°, β = 95.40° |
Black phosphorus (BP) | 0.3 eV | Semiconductor (direct band gap) | Orthorhombic C | a = 0.331 nm, b = 1.048 nm, c = 0.437 nm, α = β = γ = 90° |
Hexagonal Boron Nitride (h-BN) | 5.9 eV | Insulator/Semiconductor (direct band gap) | Hexagonal | a = b = 0.2502 nm, c = 0.6617 nm, α = β = 90°, γ = 120° |
Dibismuth trisulphide (Bi2S3) | 1.3–1.45 eV | Semiconductor (direct band gap) | Orthorhombic | a = 0.4025 nm, b = 1.117 nm, c = 1.135 nm, α = β = γ = 90° |
Gallium sulfide GaS (α phase) | 2.6 eV | Semiconductor (indirect band gap) | Hexagonal | a = 0.360 nm, b = 0.640 nm, c = 1.544 nm, α = β = 90°, γ = 120° |
Gallium selenide GaSe (2H phase) | 2.1 eV | Semiconductor (indirect band gap) | Hexagonal | a = b = 0.374 nm, c = 1.592 nm, α = β = 90°, γ = 120° |
Germanium sulfide (GeS) | 1.6 eV | Semiconductor (indirect band gap) | Orthorhombic | a = 1.450 nm, b = 0.364 nm, c = 0.430 nm, α = β = γ = 90° |
Hafnium Disulfide (HfS2) | 2 eV | Semiconductor (indirect band gap) | Hexagonal | a = b = 0.363 nm, c = 0.586 nm, α = β = 90°, γ = 120° |
Hafnium Diselenide (HfSe2) | 1.1 eV | Semiconductor (indirect band gap) | Hexagonal | a = b = 0.3745 nm, c = 0.616 nm, α = β = 90°, γ = 120° |
Indium Selenide (In2Se3) (2H phase, α-phase) | 1.14 eV | Semiconductor (direct band gap) | Hexagonal | a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120° |
Molybdenum Disulfide (MoS2) (2H phase) | 1.6 eV | Semiconductor (indirect band gap) | Hexagonal | a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120° |
Molybdenum Ditelluride (2H phase) | 1.2 eV | n-type Semiconductor (indirect band gap) | Hexagonal | a = b = 0.353 nm, c = 1.396 nm, α = β = 90°, γ = 120° |
Molybdenum Diselenide (MoSe2) (2H phase) | 1.2 eV | Semiconductor (indirect band gap) | Hexagonal | a = b = 0.329 nm, c = 1.289 nm, α = β = 90°, γ = 120° |
Molybdenum Sulfide Selenide Alloy (MoSSe) | 1.4 eV | Semiconductor (indirect band gap or direct band gap) | Hexagonal | a = b = 0.31–0.33 nm, c = 1.21–1.29 nm, α = β = 90°, γ = 120° |
Molybdenum Tungsten Diselenide Alloy (MoWSe2) | 1.2–1.3 eV | Semiconductor (indirect band gap) | Hexagonal | a = b = 0.31–0.33 nm, c = 1.21–1.30 nm, α = β = 90°, γ = 120° |
Rhenium Disulphide (ReS2) | 1.35 eV | Semiconductor (direct band gap) | Triclinic | a = 0.634 nm, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97° |
Rhenium Diselenide (ReSe2) | 1.1 eV | Semiconductor (direct band gap) | Triclinic | a = 0.658 nm, b = 0.670 nm, c = 0.672 nm, α = 91.75°, β = 105°, γ = 118.9° |
Antimony Telluride (Sb2Te3) | 0.340–0.515 eV | Semiconductor (direct band gap), topological insulator, thermoelectric material | Hexagonal | a = b = 0.425 nm, c = 3.048 nm, α = β = 90°, γ = 120° |
Tin Disulfide (SnS2) (2H phase) | 2.2 eV | Semiconductor (indirect band gap) | Hexagonal | a = b = 0.364 nm, c = 0.589 nm, α = β = 90°, γ = 120° |
Tin Diselenide (SnSe2) | 2–3 eV | Semiconductor (indirect band gap) | Hexagonal | a = b = 0.381 nm, c = 0.614 nm, α = β = 90°, γ = 120° |
Tantalum Disulfide (TaS2) (1T phase) | 1 eV | Semiconductor (direct band gap), Charge density waves (CDW) system, Mott phase | Hexagonal | a = b = 0.336 nm, c = 0.590 nm, α = β = 90°, γ = 120° |
Tungsten Disulfide (WS2) (2H phase | 1.3 eV | Semiconductor (indirect band gap) | Hexagonal | a = b = 0.315 nm, c = 1.227 nm, α = β = 90°, γ = 120° |
Tungsten Diselenide (WSe2) | 1.3 eV | Semiconductor (indirect band gap) | Hexagonal | a = b = 0.328 nm, c = 1.298 nm, α = β = 90°, γ = 120° |
Zirconium Diselenide (ZrSe2) | 1 eV | Semiconductor (indirect band gap) | Hexagonal | a = b = 0.377 nm, c = 0.614 nm, α = β = 90°, γ = 120° |
Zirconium Triselenide (ZrSe3) | 1.1 eV | Semiconductor (indirect band gap) | Monoclinic P | a = 0.541 nm, b = 0.375 nm, c = 0.944 nm, α = β = 90°, γ = 97.50° |
Two-Dimensional Material | Detected Gases | References |
---|---|---|
Graphene | CO, NO, NO2, NH3 | [33] |
CO, NO | [34] | |
NO2, NH3, H2, H2S, CO2, SO2 | [35] | |
NO2 | [36] | |
Germanene | NH3, SO2, NO2 | [37] |
N2, CO, CO2, NH3, NO, NO2, O2 | [38] | |
H2 | [39] | |
H2S, SO2, CO2 | [40] | |
NO2 | [41] | |
CO, NO | [42] | |
N2, NO, NO2, NH3 | [43] | |
Germanane | NH3 | [44] |
Silicene | NO, NO2 | [45] |
NO | [46] | |
H2S, SO2 | [47] | |
Stanene | CO, NH3, H2S, O2, NO, NO2 | [48] |
NO, NO2, NH3, N2O | [49] | |
NH3, CO, NO, NO2 | [50] | |
NH3, NO2 | [51] | |
Blue Phosphorene | O2, NO, SO2, NH3, NO2, CO2, H2S, CO, N2 | [52] |
Black Phosphorene | CH3OH | [53] |
NO2 | [54] | |
SO2 | [55] | |
CH4, CO2, H2, NH3 | [56] | |
PH3, AsH3 | [57] | |
HCN, HNC | [58] | |
NO2 | [59] | |
SO2 | [60] | |
Arsenene | NH3, NO2 | [61] |
SO2, NO2 | [62] | |
NO, NO2 | [63] | |
Aluminene | CO, NO | [64] |
Antimonene | NH3, SO2, NO, NO2 | [65] |
CO | [66] | |
CO, NO, NO2, O2, NH3, H2 | [67] | |
NH3, NO2 | [68] | |
Borophene | CO, NO, NO2, NH3, CO2 | [69] |
NH3, NO, NO2, CO | [70] | |
WS2 | NH3 | [71] |
H2 | [72] | |
NH3, CH2O, CH3CH2OH, C6H6, C3H6O | [73] | |
WSe2 | NO2, NH3, CO2, C3H6O | [74] |
MoS2 | NO | [75] |
NO2, NH3 | [76] | |
NO2 | [77] | |
CO, CO2, NO | [78] | |
NH3, NO2 | [79] | |
MoSe2 | NO2 | [80] |
CH3OH, CH3CH2OH | [81] | |
MoTe2 | O2 | [82] |
Boron Nitride (BN) | CO | [83] |
CH4 | [84] | |
NH3 | [85] | |
GeTe | NO | [86] |
GeSe | NH3, SO2, NO2 | [87] |
O2, NH3, SO2, H2, CO2, H2S, NO2, CH4, NO, CO | [88] | |
GeS | NO2 | [89] |
InN | CO, NH3, H2S, NO2, NO, SO2 | [90] |
InSe | CO, NH3, N2, NO2, NO, and O2 | [91] |
CO, NO, NO2, H2S, N2, O2, NH3, H2 | [92] | |
SnS2 | NO2 | [93] |
O2 | [94] | |
NH3 | [95] | |
SnSe2 | CH4 | [96] |
HfS2 | O2 | [82] |
HfSe2 | O2 | [82] |
M2CO2, M = Sc, Ti, Zr, and Hf | NH3 | [97] |
Ti3C2(OH)2 | Volatile organic compounds (VOCs) | [98] |
Sc2CO2 | SO2 | [99] |
IrB14 | CO, CO2 | [100] |
Material | Detected Gases | References |
---|---|---|
Graphene/Molybdenum Disulfide (MoS2) | NO2 | [101] |
Indium Oxide (In2O3)—Graphene | NO2 | [102] |
Indium Oxide (In2O3)—Nitrogen-doped Reduced Graphene Oxide (N-RGO) | CO | [103] |
Titania (TiO2)/Stanene | SOx | [104] |
Palladium—Tin Oxide—Molybdenum Disulfide (Pd-SnO2/MoS2) | H2 | [105] |
Reduced Graphene Oxide—Zinc Oxide—Aluminum Gallium Nitride/Gallium Nitride (RGO-ZnO-AlGaN/GaN) | NO2, SO2, HCHO | [106] |
Poly(3-hexylthiophene)—Zinc Oxide–Graphene Oxide (P3HT-ZnO@GO) | NO2 | [107] |
Crystal System | Relations | |
---|---|---|
Lattice Constants | Interaxial Angles | |
Cubic | a = b = c | α = β = γ = 90° |
Tetragonal | a = b ≠ c | α = β = γ = 90° |
Orthorhombic | a ≠ b ≠ c | α = β = γ = 90° |
Monoclinic | a ≠ b ≠ c | α = γ, β ≠ 90° |
Triclinic | a ≠ b ≠ c | α ≠ β ≠ γ ≠ 90° |
Trigonal (Rhombohedral) | a = b = c | α = β = γ ≠ 90° |
Hexagonal | a = b ≠ c | α = β, γ = 120° |
Symbol | Description |
---|---|
Γ | Center of the Brillouin zone |
A | Center of a hexagonal face |
H | Corner point |
K | Middle of an edge joining two rectangular faces |
L | Middle of an edge joining a hexagonal and a rectangular face |
M | Center of a rectangular face |
Crystalline Lattice | First Brillouin Zone |
---|---|
Hexagonal | |
Orthorhombic | |
Monoclinic (P and C) | |
Triclinic |
Symmetry Points | [kx, ky, kz] | Point Group |
---|---|---|
Γ: (0, 0, 0) | [0, 0, 0] | 6/mmm |
A: (0, 0, 1/2) | [0, 0, π/c] | 6/mmm |
K: (2/3, 1/3, 0) | [4π/3a, 0, 0] | 2m |
H: (2/3, 1/3, 1/2) | [4π/3a, 0, π/c] | 2m |
M: (1/2, 0, 0) | [π/a, -π/a, 0] | mmm |
L: (1/2, 0, 1/2) | [π/a, -π/a, π/c] | mmm |
Symmetry Points | [kx, ky, kz] | Point Group |
---|---|---|
Γ: (0, 0, 0) | [0, 0, 0] | mmm |
Y: (1/2, 1/2, 0) | [π/a, 0, 0] | mmm |
Y’ or Y1: (−1/2, 1/2, 0) | [0, π/b, 0] | mmm |
Z: (0, 0, 1/2) | [0, 0, π/c] | mmm |
T: (1/2, 1/2, 1/2) | [π/a, 0, π/c] | mmm |
T’ o T1: (−1/2, 1/2, 1/2) | [0, π/b, π/c] | mmm |
S: (0, 1/2, 0) | [π/2a, π/2b, 0] | 2/m |
R: (0, 1/2, 1/2) | [π/2a, π/2b, π/c] | 2/m |
Symmetry Points |
---|
Γ |
L |
M |
N |
R |
X |
Y |
Z |
Symmetry Points | [kx, ky, kz] |
---|---|
Γ | [0, 0, 0] |
X | [2π/a, −2π/atanγ, 0] |
Y | [0, 2π/bsinγ, 0] |
Z | [0, 0, 2π/c] |
A | [2π/a, −2π/atanγ, 2π/c] |
D | [0, 2π/bsinγ, 2π/c] |
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Vargas-Bernal, R. Electrical Properties of Two-Dimensional Materials Used in Gas Sensors. Sensors 2019, 19, 1295. https://doi.org/10.3390/s19061295
Vargas-Bernal R. Electrical Properties of Two-Dimensional Materials Used in Gas Sensors. Sensors. 2019; 19(6):1295. https://doi.org/10.3390/s19061295
Chicago/Turabian StyleVargas-Bernal, Rafael. 2019. "Electrical Properties of Two-Dimensional Materials Used in Gas Sensors" Sensors 19, no. 6: 1295. https://doi.org/10.3390/s19061295