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Open AccessArticle

Tuning the Polarity of MoTe2 FETs by Varying the Channel Thickness for Gas-Sensing Applications

1
School of Engineering and Applied Science, The George Washington University, Washington, DC 20052, USA
2
Department of Physics, Georgetown University, Washington, DC 20057, USA
3
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA
*
Authors to whom correspondence should be addressed.
Sensors 2019, 19(11), 2551; https://doi.org/10.3390/s19112551
Received: 2 April 2019 / Revised: 30 May 2019 / Accepted: 1 June 2019 / Published: 4 June 2019
(This article belongs to the Special Issue Gas Sensors and Smart Sensing Systems)
In this study, electrical characteristics of MoTe2 field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe2 crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe2 channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe2 FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH3) sensing, which confirms the p- and n-type behavior of MoTe2 devices. View Full-Text
Keywords: 2D materials; MoTe2; channel thickness effect; polarity switching 2D materials; MoTe2; channel thickness effect; polarity switching
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Rani, A.; DiCamillo, K.; Khan, M.A.H.; Paranjape, M.; Zaghloul, M.E. Tuning the Polarity of MoTe2 FETs by Varying the Channel Thickness for Gas-Sensing Applications. Sensors 2019, 19, 2551.

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