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Sensors 2018, 18(4), 1065; https://doi.org/10.3390/s18041065

A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

1
School of Physics, Nanjing University, Nanjing 210093, China
2
School of Electric Science & Engineering, Nanjing University, Nanjing 210093, China
*
Author to whom correspondence should be addressed.
Received: 5 March 2018 / Revised: 30 March 2018 / Accepted: 30 March 2018 / Published: 2 April 2018
(This article belongs to the Special Issue Magnetic Sensors)
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Abstract

In this paper, a new single-device three-dimensional (3D) Hall sensor called a cross-shaped 3D Hall device is designed based on the five-contact vertical Hall device. Some of the device parameters are based on 0.18 μm BCDliteTM technology provided by GLOBALFOUNDRIES. Two-dimensional (2D) and 3D finite element models implemented in COMSOL are applied to understand the device behavior under a constant magnetic field. Besides this, the influence of the sensing contacts, active region’s depth, and P-type layers are taken into account by analyzing the distribution of the voltage along the top edge and the current density inside the devices. Due to the short-circuiting effect, the sensing contacts lead to degradation in sensitivities. The P-type layers and a deeper active region in turn are responsible for the improvement of sensitivities. To distinguish the P-type layer from the active region which plays the dominant role in reducing the short-circuiting effect, the current-related sensitivity of the top edge (Stop) is defined. It is found that the short-circuiting effect fades as the depth of the active region grows. Despite the P-type layers, the behavior changes a little. When the depth of the active region is 7 μm and the thickness of the P-type layers is 3 μm, the sensitivities in the x, y, and z directions can reach 91.70 V/AT, 92.36 V/AT, and 87.10 V/AT, respectively. View Full-Text
Keywords: three-contact Hall device; cross-shaped 3D Hall device; sensitivity; P-type layers three-contact Hall device; cross-shaped 3D Hall device; sensitivity; P-type layers
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Tang, W.; Lyu, F.; Wang, D.; Pan, H. A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor. Sensors 2018, 18, 1065.

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