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Open AccessArticle

Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel

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TowerJazz Panasonic Semiconductor Co., Ltd., 800 Higashiyama, Uozu City, Toyama 937-8585, Japan
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Tower Semiconductors, Migdal Haemeq 23105, Israel
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Author to whom correspondence should be addressed.
This paper is an expanded version of our published paper: Yokoyama, T.; Suzuki, M.; Nishi, Y.; Mizuno, I.; Lahav, A. Design of Double Micro Lens Structure for 2.8 μm Global Shutter Pixel. In Proceedings of the 2017 International Image Sensor Workshop, Hiroshima, Japan, 30 May–2 June 2017.
Sensors 2018, 18(2), 349; https://doi.org/10.3390/s18020349
Received: 31 October 2017 / Revised: 22 January 2018 / Accepted: 23 January 2018 / Published: 25 January 2018
(This article belongs to the Special Issue Special Issue on the 2017 International Image Sensor Workshop (IISW))
We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE). 1/PLS is 7700 and QE is 62% at a wavelength of 530 nm. We also propose a new storage-gate based memory node for low dark current. P-type implants and negative gate biasing are introduced to suppress dark current at the surface of the memory node. This memory node structure shows the world smallest dark current of 9.5 e/s at 60 °C. View Full-Text
Keywords: global shutter; parasitic light sensitivity (PLS); dark current global shutter; parasitic light sensitivity (PLS); dark current
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Yokoyama, T.; Tsutsui, M.; Suzuki, M.; Nishi, Y.; Mizuno, I.; Lahav, A. Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel. Sensors 2018, 18, 349.

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