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Article

Influence of Oxygen Vacancy Behaviors in Cooling Process on Semiconductor Gas Sensors: A Numerical Analysis †

1
College of Information Science and Technology, Dalian Maritime University, Dalian 116026, China
2
Department of Material Science and Engineering, Dalian Maritime University, Dalian 116026, China
*
Author to whom correspondence should be addressed.
Part of this work will be presented at the 7th Global Conference on Materials Science and Engineering (CMSE 2018) and included in this conference proceedings.
Sensors 2018, 18(11), 3929; https://doi.org/10.3390/s18113929
Received: 15 October 2018 / Revised: 7 November 2018 / Accepted: 12 November 2018 / Published: 14 November 2018
The influence of oxygen vacancy behaviors during a cooling process in semiconductor gas sensors is discussed by the numerical analysis method based on the gradient-distributed oxygen vacancy model. A diffusion equation is established to describe the behaviors of oxygen vacancies, which follows the effects of diffusion and exclusion in the cooling process. Numerical analysis is introduced to find the accurate solutions of the diffusion equation. The solutions illustrate the oxygen vacancy distribution profiles, which are dependent on the cooling rate as well as the temperature interval of the cooling process. The gas-sensing characteristics of reduced resistance and response are calculated. Both of them, together with oxygen vacancy distribution, show the grain size effects and the re-annealing effect. It is found that the properties of gas sensors can be controlled or adjusted by the designed cooling process. The proposed model provides a possibility for sensor characteristics simulations, which may be beneficial for the design of gas sensors. A quantitative interpretation on the gas-sensing mechanism of semiconductors has been contributed. View Full-Text
Keywords: semiconductor; gas sensor; oxygen vacancy; diffusion equation; numerical analysis semiconductor; gas sensor; oxygen vacancy; diffusion equation; numerical analysis
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MDPI and ACS Style

Liu, J.; Wang, W.; Zhai, Z.; Jin, G.; Chen, Y.; Hong, W.; Wu, L.; Gao, F. Influence of Oxygen Vacancy Behaviors in Cooling Process on Semiconductor Gas Sensors: A Numerical Analysis. Sensors 2018, 18, 3929. https://doi.org/10.3390/s18113929

AMA Style

Liu J, Wang W, Zhai Z, Jin G, Chen Y, Hong W, Wu L, Gao F. Influence of Oxygen Vacancy Behaviors in Cooling Process on Semiconductor Gas Sensors: A Numerical Analysis. Sensors. 2018; 18(11):3929. https://doi.org/10.3390/s18113929

Chicago/Turabian Style

Liu, Jianqiao, Wanqiu Wang, Zhaoxia Zhai, Guohua Jin, Yuzhen Chen, Wusong Hong, Liting Wu, and Fengjiao Gao. 2018. "Influence of Oxygen Vacancy Behaviors in Cooling Process on Semiconductor Gas Sensors: A Numerical Analysis" Sensors 18, no. 11: 3929. https://doi.org/10.3390/s18113929

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