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Sensors 2018, 18(11), 3755; https://doi.org/10.3390/s18113755

Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions

Institute for Microelectronics and Microsystems, National Research Council, I-80131 Napoli, Italy
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Received: 28 September 2018 / Revised: 26 October 2018 / Accepted: 29 October 2018 / Published: 3 November 2018
(This article belongs to the Special Issue Integrated Sensors)
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Abstract

This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 µm. View Full-Text
Keywords: silicon; near-infrared; photodetectors; internal photoemission; erbium silicon; near-infrared; photodetectors; internal photoemission; erbium
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Gioffré, M.; Coppola, G.; Iodice, M.; Casalino, M. Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions. Sensors 2018, 18, 3755.

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