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Sensors 2018, 18(11), 3755;

Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions

Institute for Microelectronics and Microsystems, National Research Council, I-80131 Napoli, Italy
Author to whom correspondence should be addressed.
Received: 28 September 2018 / Revised: 26 October 2018 / Accepted: 29 October 2018 / Published: 3 November 2018
(This article belongs to the Special Issue Integrated Sensors)
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This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 µm. View Full-Text
Keywords: silicon; near-infrared; photodetectors; internal photoemission; erbium silicon; near-infrared; photodetectors; internal photoemission; erbium

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Gioffré, M.; Coppola, G.; Iodice, M.; Casalino, M. Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions. Sensors 2018, 18, 3755.

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