A Fast Room Temperature NH3 Sensor Based on an Al/p-Si/Al Structure with Schottky Electrodes

Zhu, Suwan; Liu, Xiaolong; Zhuang, Jun; Zhao, Li

doi:10.3390/s17081929

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Article

22 August 2017

9 Pages

A Fast Room Temperature NH₃ Sensor Based on an Al/p-Si/Al Structure with Schottky Electrodes

and

Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China

Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China

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Sensors2017, 17(8), 1929;https://doi.org/10.3390/s17081929

This article belongs to the Collection Gas Sensors

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Abstract

In this paper, an electrical-based NH₃ sensor with an Al/p-Si/Al structure is reported. The p-Si substrate is microstructured by fs-laser irradiation and then etched by 30% alkaline solution. This sensor works well at room temperature with fast response/recovery for NH₃ gas at 5–100 ppm concentration. However, when the sensor is annealed in N₂/H₂ forming gas or short-circuited for Al/Si electrodes, its sensitivity decreases drastically and almost vanishes. Further I-V and FT-IR results show that the two back-to-back Schottky diodes on the device play a key role in its sensing performance.

Keywords:

silicon; ammonia; gas sensor; microstructure

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