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Sensors 2017, 17(8), 1929;

A Fast Room Temperature NH3 Sensor Based on an Al/p-Si/Al Structure with Schottky Electrodes

Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
Authors to whom correspondence should be addressed.
Received: 12 July 2017 / Revised: 18 August 2017 / Accepted: 19 August 2017 / Published: 22 August 2017
(This article belongs to the Collection Gas Sensors)
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In this paper, an electrical-based NH3 sensor with an Al/p-Si/Al structure is reported. The p-Si substrate is microstructured by fs-laser irradiation and then etched by 30% alkaline solution. This sensor works well at room temperature with fast response/recovery for NH3 gas at 5–100 ppm concentration. However, when the sensor is annealed in N2/H2 forming gas or short-circuited for Al/Si electrodes, its sensitivity decreases drastically and almost vanishes. Further I-V and FT-IR results show that the two back-to-back Schottky diodes on the device play a key role in its sensing performance. View Full-Text
Keywords: silicon; ammonia; gas sensor; microstructure silicon; ammonia; gas sensor; microstructure

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Zhu, S.; Liu, X.; Zhuang, J.; Zhao, L. A Fast Room Temperature NH3 Sensor Based on an Al/p-Si/Al Structure with Schottky Electrodes. Sensors 2017, 17, 1929.

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