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Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method

1
Department of Fusion Chemical Engineering, Hanyang University, Ansan 15588, Korea
2
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Samsungjeonja-ro 1, Hwaseong, Gyeonggi-do 445-330, Korea
3
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
*
Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Sensors 2017, 17(12), 2750; https://doi.org/10.3390/s17122750
Received: 13 October 2017 / Revised: 6 November 2017 / Accepted: 23 November 2017 / Published: 28 November 2017
(This article belongs to the Special Issue Graphene Based Sensors and Electronics)
In this study, a graphene-doped porous silicon (G-doped/p-Si) substrate for low ppm H2 gas detection by an inexpensive synthesis route was proposed as a potential noble graphene-based gas sensor material, and to understand the sensing mechanism. The G-doped/p-Si gas sensor was synthesized by a simple capillary force-assisted solution dropping method on p-Si substrates, whose porosity was generated through an electrochemical etching process. G-doped/p-Si was fabricated with various graphene concentrations and exploited as a H2 sensor that was operated at room temperature. The sensing mechanism of the sensor with/without graphene decoration on p-Si was proposed to elucidate the synergetic gas sensing effect that is generated from the interface between the graphene and p-type silicon. View Full-Text
Keywords: graphene-doped porous silicon; p-type silicon; hydrogen sensor; sensing mechanism graphene-doped porous silicon; p-type silicon; hydrogen sensor; sensing mechanism
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Eom, N.S.A.; Cho, H.-B.; Song, Y.; Lee, W.; Sekino, T.; Choa, Y.-H. Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method. Sensors 2017, 17, 2750.

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