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Sensors 2015, 15(6), 13424-13458;

Profiling of Current Transients in Capacitor Type Diamond Sensors

Institute of Applied Research, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, Lithuania
Belarusian State University, Nezavisimosti av. 4, 220030 Minsk, Belarus
Author to whom correspondence should be addressed.
Academic Editor: Vittorio M.N. Passaro
Received: 27 April 2015 / Revised: 28 May 2015 / Accepted: 3 June 2015 / Published: 8 June 2015
(This article belongs to the Section Physical Sensors)
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The operational characteristics of capacitor-type detectors based on HPHT and CVD diamond have been investigated using perpendicular and parallel injection of carrier domain regimes. Simulations of the drift-diffusion current transients have been implemented by using dynamic models based on Shockley-Ramo’s theorem, under injection of localized surface domains and of bulk charge carriers. The bipolar drift-diffusion regimes have been analyzed for the photo-induced bulk domain (packet) of excess carriers. The surface charge formation and polarization effects dependent on detector biasing voltage have been revealed. The screening effects ascribed to surface charge and to dynamics of extraction of the injected bulk excess carrier domain have been separated and explained. The parameters of drift mobility of the electrons μe = 4000 cm2/Vs and holes μh = 3800 cm2/Vs have been evaluated for CVD diamond using the perpendicular profiling of currents. The coefficient of carrier ambipolar diffusion Da = 97 cm2/s and the carrier recombination lifetime τR,CVD ≌ 110 ns in CVD diamond were extracted by combining analysis of the transients of the sensor current and the microwave probed photoconductivity. The carrier trapping with inherent lifetime τR,HPHT ≌ 2 ns prevails in HPHT diamond. View Full-Text
Keywords: HPHT and CVD grown diamond; carrier lifetime; drift mobility; ambipolar diffusion HPHT and CVD grown diamond; carrier lifetime; drift mobility; ambipolar diffusion

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Gaubas, E.; Ceponis, T.; Meskauskaite, D.; Kazuchits, N. Profiling of Current Transients in Capacitor Type Diamond Sensors. Sensors 2015, 15, 13424-13458.

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