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Sensors 2014, 14(9), 17406-17429;

Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors

Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China
Author to whom correspondence should be addressed.
Received: 29 June 2014 / Revised: 23 July 2014 / Accepted: 28 July 2014 / Published: 17 September 2014
(This article belongs to the Special Issue Gas Sensors Based on the Field Effect)
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One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed. View Full-Text
Keywords: gas sensors; semiconducting nanowires; field effect transistors gas sensors; semiconducting nanowires; field effect transistors

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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Feng, P.; Shao, F.; Shi, Y.; Wan, Q. Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors. Sensors 2014, 14, 17406-17429.

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