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Open AccessArticle

Manufacture of Radio Frequency Micromachined Switches with Annealing

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan
Author to whom correspondence should be addressed.
Sensors 2014, 14(1), 1680-1690;
Received: 30 October 2013 / Revised: 27 December 2013 / Accepted: 8 January 2014 / Published: 17 January 2014
(This article belongs to the Special Issue Modeling, Testing and Reliability Issues in MEMS Engineering 2013)
The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V. View Full-Text
Keywords: micromachined switches; annealing; post-process micromachined switches; annealing; post-process
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MDPI and ACS Style

Lin, C.-Y.; Dai, C.-L. Manufacture of Radio Frequency Micromachined Switches with Annealing. Sensors 2014, 14, 1680-1690.

AMA Style

Lin C-Y, Dai C-L. Manufacture of Radio Frequency Micromachined Switches with Annealing. Sensors. 2014; 14(1):1680-1690.

Chicago/Turabian Style

Lin, Cheng-Yang; Dai, Ching-Liang. 2014. "Manufacture of Radio Frequency Micromachined Switches with Annealing" Sensors 14, no. 1: 1680-1690.

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