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Open AccessArticle

Level Set Approach to Anisotropic Wet Etching of Silicon

Institute of Physics, Pregrevica 118, 11080 Beograd, Serbia
Vinča Institute of Nuclear Sciences, P.O. Box 522, 11001 Beograd, Serbia
Author to whom correspondence should be addressed.
Sensors 2010, 10(5), 4950-4967;
Received: 31 December 2009 / Revised: 8 April 2010 / Accepted: 13 April 2010 / Published: 17 May 2010
(This article belongs to the Special Issue Modeling, Testing and Reliability Issues in MEMS Engineering - 2009)
In this paper a methodology for the three dimensional (3D) modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community), extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures) are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process. View Full-Text
Keywords: etching; level set; profile evolution; simulation etching; level set; profile evolution; simulation
MDPI and ACS Style

Radjenović, B.; Radmilović-Radjenović, M.; Mitrić, M. Level Set Approach to Anisotropic Wet Etching of Silicon. Sensors 2010, 10, 4950-4967.

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