Schemes for Single Electron Transistor Based on Double Quantum Dot Islands Utilizing a Graphene Nanoscroll, Carbon Nanotube and Fullerene

Khademhosseini, Vahideh; Dideban, Daryoosh; Ahmadi, Mohammad Taghi; Heidari, Hadi

doi:10.3390/molecules27010301

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Schemes for Single Electron Transistor Based on Double Quantum Dot Islands Utilizing a Graphene Nanoscroll, Carbon Nanotube and Fullerene

Vahideh Khademhosseini

Daryoosh Dideban

^1,2,*

Mohammad Taghi Ahmadi

and

Hadi Heidari

⁴

Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan 8731753153, Iran

Department of Electrical and Computer Engineering, University of Kashan, Kashan 8731753153, Iran

Nanotechnology Research Center, Nano-Physic Group, Department of Physics, Urmia University, Urmia 5756151818, Iran

⁴

James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UK

Author to whom correspondence should be addressed.

Academic Editor: Seyyed Alireza Mirkhani

Molecules 2022, 27(1), 301; https://doi.org/10.3390/molecules27010301

Received: 4 December 2021 / Revised: 26 December 2021 / Accepted: 31 December 2021 / Published: 4 January 2022

(This article belongs to the Special Issue Fullerenes, Graphenes and Carbon Nanotubes Nanocomposites)

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Abstract

The single electron transistor (SET) is a nanoscale switching device with a simple equivalent circuit. It can work very fast as it is based on the tunneling of single electrons. Its nanostructure contains a quantum dot island whose material impacts on the device operation. Carbon allotropes such as fullerene (C₆₀), carbon nanotubes (CNTs) and graphene nanoscrolls (GNSs) can be utilized as the quantum dot island in SETs. In this study, multiple quantum dot islands such as GNS-CNT and GNS-C₆₀ are utilized in SET devices. The currents of two counterpart devices are modeled and analyzed. The impacts of important parameters such as temperature and applied gate voltage on the current of two SETs are investigated using proposed mathematical models. Moreover, the impacts of CNT length, fullerene diameter, GNS length, and GNS spiral length and number of turns on the SET’s current are explored. Additionally, the Coulomb blockade ranges (CB) of the two SETs are compared. The results reveal that the GNS-CNT SET has a lower Coulomb blockade range and a higher current than the GNS-C₆₀ SET. Their charge stability diagrams indicate that the GNS-CNT SET has smaller Coulomb diamond areas, zero-current regions, and zero-conductance regions than the GNS-C₆₀ SET. View Full-Text

Keywords: carbon nanotube (CNT); fullerene; graphene nanoscroll (GNS); multiple quantum dot islands; single electron transistor

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MDPI and ACS Style

Khademhosseini, V.; Dideban, D.; Ahmadi, M.T.; Heidari, H. Schemes for Single Electron Transistor Based on Double Quantum Dot Islands Utilizing a Graphene Nanoscroll, Carbon Nanotube and Fullerene. Molecules 2022, 27, 301. https://doi.org/10.3390/molecules27010301

AMA Style

Khademhosseini V, Dideban D, Ahmadi MT, Heidari H. Schemes for Single Electron Transistor Based on Double Quantum Dot Islands Utilizing a Graphene Nanoscroll, Carbon Nanotube and Fullerene. Molecules. 2022; 27(1):301. https://doi.org/10.3390/molecules27010301

Chicago/Turabian Style

Khademhosseini, Vahideh, Daryoosh Dideban, Mohammad T. Ahmadi, and Hadi Heidari. 2022. "Schemes for Single Electron Transistor Based on Double Quantum Dot Islands Utilizing a Graphene Nanoscroll, Carbon Nanotube and Fullerene" Molecules 27, no. 1: 301. https://doi.org/10.3390/molecules27010301

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Schemes for Single Electron Transistor Based on Double Quantum Dot Islands Utilizing a Graphene Nanoscroll, Carbon Nanotube and Fullerene

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