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Keywords = through-silicon-wafer-etching

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14 pages, 8579 KB  
Article
A MEMS Micro-g Capacitive Accelerometer Based on Through-Silicon-Wafer-Etching Process
by Kang Rao, Xiaoli Wei, Shaolin Zhang, Mengqi Zhang, Chenyuan Hu, Huafeng Liu and Liang-Cheng Tu
Micromachines 2019, 10(6), 380; https://doi.org/10.3390/mi10060380 - 7 Jun 2019
Cited by 44 | Viewed by 13450
Abstract
This paper presents a micromachined micro-g capacitive accelerometer with a silicon-based spring-mass sensing element. The displacement changes of the proof mass are sensed by an area-variation-based capacitive displacement transducer that is formed by the matching electrodes on both the movable proof mass die [...] Read more.
This paper presents a micromachined micro-g capacitive accelerometer with a silicon-based spring-mass sensing element. The displacement changes of the proof mass are sensed by an area-variation-based capacitive displacement transducer that is formed by the matching electrodes on both the movable proof mass die and the glass cover plate through the flip-chip packaging. In order to implement a high-performance accelerometer, several technologies are applied: the through-silicon-wafer-etching process is used to increase the weight of proof mass for lower thermal noise, connection beams are used to reduce the cross-sensitivity, and the periodic array area-variation capacitive displacement transducer is applied to increase the displacement-to-capacitance gain. The accelerometer prototype is fabricated and characterized, demonstrating a scale factor of 510 mV/g, a noise floor of 2 µg/Hz1/2 at 100 Hz, and a bias instability of 4 µg at an averaging time of 1 s. Experimental results suggest that the proposed MEMS capacitive accelerometer is promising to be used for inertial navigation, structural health monitoring, and tilt measurement applications. Full article
(This article belongs to the Special Issue Advances in Capacitive Sensors)
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