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Keywords = sub-7 nm nanowire GAA MOSFET

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13 pages, 5403 KiB  
Article
A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs
by He Cheng, Zhijia Yang, Chao Zhang, Chuang Xie, Tiefeng Liu, Jian Wang and Zhipeng Zhang
Nanomaterials 2022, 12(19), 3401; https://doi.org/10.3390/nano12193401 - 28 Sep 2022
Cited by 2 | Viewed by 2062
Abstract
We propose a numerical compact model for describing the drain current in ballistic mode by using an expression to represent the transmission coefficients for all operating regions. This model is based on our previous study of an analytic compact model for the subthreshold [...] Read more.
We propose a numerical compact model for describing the drain current in ballistic mode by using an expression to represent the transmission coefficients for all operating regions. This model is based on our previous study of an analytic compact model for the subthreshold region in which the DIBL and source-to-drain tunneling effects were both taken into account. This paper introduces an approach to establishing the smoothing function for expressing the critical parameters in the model’s overall operating regions. The resulting compact model was tested in a TCAD NEGF simulation, demonstrating good consistency. Full article
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11 pages, 2985 KiB  
Article
Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
by Jie Gu, Qingzhu Zhang, Zhenhua Wu, Jiaxin Yao, Zhaohao Zhang, Xiaohui Zhu, Guilei Wang, Junjie Li, Yongkui Zhang, Yuwei Cai, Renren Xu, Gaobo Xu, Qiuxia Xu, Huaxiang Yin, Jun Luo, Wenwu Wang and Tianchun Ye
Nanomaterials 2021, 11(2), 309; https://doi.org/10.3390/nano11020309 - 26 Jan 2021
Cited by 20 | Viewed by 4583
Abstract
A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum [...] Read more.
A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. Full article
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