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Keywords = resistance of silicon heterojunction solar cells (SHJ)

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19 pages, 10203 KiB  
Article
Optical, Electrical and Structural Properties of ITO/IZO and IZO/ITO Multilayer Transparent Conductive Oxide Films Deposited via Radiofrequency Magnetron Sputtering
by Ayşe Seyhan and Emre Kartal
Coatings 2023, 13(10), 1719; https://doi.org/10.3390/coatings13101719 - 1 Oct 2023
Cited by 10 | Viewed by 4488
Abstract
In this study, we investigated the potential of multilayer TCO structures, specifically those made up of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO), for crystalline silicon heterojunction solar cells (SHJ). We used the radiofrequency (RF) magnetron sputtering method to deposit various [...] Read more.
In this study, we investigated the potential of multilayer TCO structures, specifically those made up of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO), for crystalline silicon heterojunction solar cells (SHJ). We used the radiofrequency (RF) magnetron sputtering method to deposit various thin-film structures under various deposition temperatures and evaluated their electrical, optical, and morphological properties. The objective was to obtain films with lower sheet resistances and higher transmittances than those of single-layer thin films. Our results show that the ITO/IZO/ITO/IZO/ITO multilayer film structure deposited at 200 °C achieves the best sheet resistance of 18.5 Ohm/sq and a high optical transmittance of over 90% at a 550 nm wavelength. This indicates that multilayer TCO structures have the potential to be more optically and electrically efficient, and that they can improve the performance of optoelectronic devices. Finally, a power conversion efficiency of 17.46% was obtained for a silicon heterojunction (SHJ) solar cell fabricated using an ITO/IZO/ITO/IZO/ITO multilayer film structure deposited at 200 °C as a front TCO. Our study provides valuable insights into the field of TCOs and offers a promising avenue for future research. Full article
(This article belongs to the Section Thin Films)
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12 pages, 2131 KiB  
Article
Simulation of Silicon Heterojunction Solar Cells for High Efficiency with Lithium Fluoride Electron Carrier Selective Layer
by Muhammad Quddamah Khokhar, Shahzada Qamar Hussain, Duy Phong Pham, Sunhwa Lee, Hyeongsik Park, Youngkuk Kim, Eun-Chel Cho and Junsin Yi
Energies 2020, 13(7), 1635; https://doi.org/10.3390/en13071635 - 2 Apr 2020
Cited by 19 | Viewed by 5953
Abstract
In this work, to ameliorate the quantum efficiency (QE), we made a valuable development by using wide band gap material, such as lithium fluoride (LiFx), as an emitter that also helped us to achieve outstanding efficiency with silicon heterojunction (SHJ) solar [...] Read more.
In this work, to ameliorate the quantum efficiency (QE), we made a valuable development by using wide band gap material, such as lithium fluoride (LiFx), as an emitter that also helped us to achieve outstanding efficiency with silicon heterojunction (SHJ) solar cells. Lithium fluoride holds a capacity to achieve significant power conversion efficiency because of its dramatic improvement in electron extraction and injection, which was investigated using the AFORS-HET simulation. We used AFORS-HET to assess the restriction of numerous parameters which also provided an appropriate way to determine the role of diverse parameters in silicon solar cells. We manifested and preferred lithium fluoride as an interfacial layer to diminish the series resistance as well as shunt leakage and it was also beneficial for the optical properties of a cell. Due to the wide band gap and better surface passivation, the LiFx encouraged us to utilize it as the interfacial as well as the emitter layer. In addition, we used the built-in electric and band offset to explore the consequence of work function in the LiFx as a carrier selective contact layer. We were able to achieve a maximum power conversion efficiency (PEC) of 23.74%, fill factor (FF) of 82.12%, Jsc of 38.73 mA cm−2, and Voc of 741 mV by optimizing the work function and thickness of LiFx layer. Full article
(This article belongs to the Section A2: Solar Energy and Photovoltaic Systems)
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10 pages, 1513 KiB  
Article
Aluminum-Doped Zinc Oxide as Front Electrode for Rear Emitter Silicon Heterojunction Solar Cells with High Efficiency
by Daniel Meza, Alexandros Cruz, Anna Belen Morales-Vilches, Lars Korte and Bernd Stannowski
Appl. Sci. 2019, 9(5), 862; https://doi.org/10.3390/app9050862 - 28 Feb 2019
Cited by 34 | Viewed by 5596
Abstract
Transparent conductive oxide (TCO) layers of aluminum-doped zinc oxide (ZnO:Al) were investigated as a potential replacement of indium tin oxide (ITO) for the front contact in silicon heterojunction (SHJ) solar cells in the rear emitter configuration. It was found that ZnO:Al can be [...] Read more.
Transparent conductive oxide (TCO) layers of aluminum-doped zinc oxide (ZnO:Al) were investigated as a potential replacement of indium tin oxide (ITO) for the front contact in silicon heterojunction (SHJ) solar cells in the rear emitter configuration. It was found that ZnO:Al can be tuned to yield cell performance almost at the same level as ITO with a power conversion efficiency of 22.6% and 22.8%, respectively. The main reason for the slight underperformance of ZnO:Al compared to ITO was found to be a higher contact resistivity between this material and the silver grid on the front side. An entirely indium-free SHJ solar cell, replacing the ITO on the rear side by ZnO:Al as well, reached a power conversion efficiency of 22.5%. Full article
(This article belongs to the Special Issue Next Generation Photovoltaic Solar Cells)
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19 pages, 4545 KiB  
Article
Electro-Physical Interpretation of the Degradation of the Fill Factor of Silicon Heterojunction Solar Cells Due to Incomplete Hole Collection at the a-Si:H/c-Si Thermionic Emission Barrier
by Moustafa Ghannam and Yaser Abdulraheem
Appl. Sci. 2018, 8(10), 1846; https://doi.org/10.3390/app8101846 - 8 Oct 2018
Cited by 7 | Viewed by 4104
Abstract
An electro-physical interpretation for the degradation of the Fill Factor in p+/n silicon heterojunction solar cells (SHJ) due to incomplete hole collection at the thermionic emission barrier at the amorphous/crystalline silicon (a-Si:H/c-Si) hetero-interface is proposed supported by results of AFORS-HET device [...] Read more.
An electro-physical interpretation for the degradation of the Fill Factor in p+/n silicon heterojunction solar cells (SHJ) due to incomplete hole collection at the thermionic emission barrier at the amorphous/crystalline silicon (a-Si:H/c-Si) hetero-interface is proposed supported by results of AFORS-HET device simulations. Under illumination, reflected holes at the thermionic barrier pile up at the hetero-interface which strengthens the dipole with the negative dopant ions in the doped a-Si:H(p+) layer and enhances the electric field passing through the a-Si:H layer. Such an enhanced electric field sweeps back the free holes spilling over in the intrinsic a-Si:H(i) layer from the a-Si:H(p+) layer considerably depleting the double a-Si:H layer and enhancing its resistance and the overall cell series resistance. Therefore, the degradation due to incomplete hole collection at the thermionic emission barrier under illumination can be assimilated to the effect of a series resistance does not affect the cell open circuit voltage but degrades only its fill factor. The resistance enhancement is found to be bias-dependent and to increase with decreasing the doping level in a-Si:H(p+). Predictions of the proposed model for different hole reflection probability at the barrier and for different thicknesses of the intrinsic a-Si:H(i) layer agree perfectly with the results of simulations. Full article
(This article belongs to the Special Issue Next Generation Photovoltaic Solar Cells)
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