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Keywords = quantum-dot SOA (QD-SOA)

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25 pages, 2663 KB  
Article
250 Gb/s All-Optical XNOR Logic Using a Single QD-SOA-MZI: Demonstration and Comprehensive Performance Analysis
by Amer Kotb, Bisheng Zhu, Jiali Cui and Kyriakos E. Zoiros
Micromachines 2026, 17(4), 441; https://doi.org/10.3390/mi17040441 - 1 Apr 2026
Viewed by 554
Abstract
Increasing data rates in optical networks require ultra-fast all-optical logic gates to avoid electro-optic conversion bottlenecks. This work presents a numerical simulation and performance analysis of an all-optical XNOR logic gate operating at 250 Gb/s, implemented using a single quantum-dot semiconductor optical amplifier [...] Read more.
Increasing data rates in optical networks require ultra-fast all-optical logic gates to avoid electro-optic conversion bottlenecks. This work presents a numerical simulation and performance analysis of an all-optical XNOR logic gate operating at 250 Gb/s, implemented using a single quantum-dot semiconductor optical amplifier (QD-SOA) embedded in a Mach–Zehnder interferometer (MZI). Using the QD-SOA’s ultrafast carrier dynamics and high nonlinearity, the gate achieves a quality factor (QF) of 26.30 at 250 Gb/s, corresponding to a theoretical bit-error rate below 10−9. A systematic numerical investigation examines performance dependence on six critical parameters. Data rate analysis shows that the gate maintains QF > 6 up to 700 Gb/s, with QF = 10.47 at this maximum reliable speed, providing a safety margin of approximately 1.8× above the QF = 6 threshold. Performance degrades progressively thereafter, with QF falling to 5.18 at 800 Gb/s and 0.73 at 1 Tb/s due to finite carrier recovery dynamics. Pulse energy optimization identifies an optimum at 0.20 pJ, beyond which gain saturation and nonlinear effects degrade performance below QF = 6 at 0.40 pJ. Continuous-wave probe power exhibits optimal operation at 0.40 mW, with failure above 0.80 mW. Injection current density analysis establishes an optimal bias at 4 kA/cm2, where balanced gain and nonlinearity yield peak performance. Noise tolerance assessment demonstrates operation up to a spontaneous emission factor of 6 and phase noise below 6 × 10−14 rad2/Hz, beyond which signal integrity collapses. This parameter sweep delineates the operational envelope and optimization guidelines for QD-SOA-MZI-based all-optical logic, confirming its potential as a compact core component for future ultra-high-speed optical communication and signal processing systems. Full article
(This article belongs to the Special Issue Advances in Integrated Photonic Devices)
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41 pages, 2553 KB  
Review
Advances in Semiconductor Optical Amplifier Technologies for All-Optical Logic Gate Implementations: A Comprehensive Review
by Jiali Cui, Kyriakos E. Zoiros and Amer Kotb
Nanomaterials 2026, 16(3), 202; https://doi.org/10.3390/nano16030202 - 4 Feb 2026
Cited by 2 | Viewed by 1455
Abstract
Semiconductor optical amplifiers (SOAs) are central to the development of ultrafast, low-power all-optical signal processing systems. Their strong nonlinear response, compact size, and compatibility with photonic integration platforms make them key enablers for implementing all-optical logic functions beyond the limitations of electronic switching. [...] Read more.
Semiconductor optical amplifiers (SOAs) are central to the development of ultrafast, low-power all-optical signal processing systems. Their strong nonlinear response, compact size, and compatibility with photonic integration platforms make them key enablers for implementing all-optical logic functions beyond the limitations of electronic switching. This review offers a comprehensive analysis of the principal SOA technologies used in all-optical logic gate implementations, including conventional bulk and quantum well SOAs, quantum dot SOAs (QD-SOAs), photonic crystal SOAs (PhC-SOAs), reflective SOAs (RSOAs), and carrier reservoir SOAs (CR-SOAs). For each architecture, we examine the carrier dynamics, gain recovery mechanisms, saturation behavior, and fabrication considerations, together with their associated nonlinear effects such as cross-gain modulation, cross-phase modulation, and four-wave mixing. We further evaluate reported implementations of key logic operations—AND, NAND, OR, NOR, XOR, and XNOR—highlighting performance trade-offs in terms of speed, extinction ratio, operational power, integration complexity, and scalability. The review concludes with current challenges and emerging research directions aimed at realizing fully integrated, high-speed, and energy-efficient all-optical logic systems based on next-generation SOA technologies. Full article
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22 pages, 3504 KB  
Review
A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band
by Hui Tang, Changjin Yang, Li Qin, Lei Liang, Yuxin Lei, Peng Jia, Yongyi Chen, Yubing Wang, Yue Song, Cheng Qiu, Chuantao Zheng, Xin Li, Dabing Li and Lijun Wang
Sensors 2023, 23(17), 7326; https://doi.org/10.3390/s23177326 - 22 Aug 2023
Cited by 38 | Viewed by 11118
Abstract
The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and [...] Read more.
The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized. Full article
(This article belongs to the Special Issue Integrated Photonics for Free Space Communication and Sensing)
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