Search Results (3)

This paper presents the study of power/ground (P/G) supply-induced jitter (PGSIJ) on a cascaded inverter output buffer. The PGSIJ analysis covers the IO buffer transient simulation under P/G supply voltage variation at three process, voltage, and temperature (PVT) corners defined at different working temperatures and distinct $P/G$ DC supply voltages at the pre-driver (i.e., $V_{DD}$/$V_{SS}$) and last stage (i.e., $V_{DDQ}/V_{SSQ}$). Firstly, the induced jitter contributions by the pre-driver, as well as the last, stage are compared and studied. Secondly, the shared and decoupled P/G supply topologies are investigated. The outcomes of these simulation analyses with respect to worst case jitter corners are determined, while highlighting the importance of modeling the pre-driver circuit behavior to include the induced jitter in the input–output buffer information specification (IBIS)-like model. Accordingly, the measured PGSIJ depends on the corners to be analyzed and, therefore, the designer needs to explore the worst-case corner for the driver’s technology node and the most supply voltage noise affecting the jitter output for signal and power integrity (SiPI) simulations. Finally, the jitter transfer function sensitivity to the amplitude and frequency/phase variations of the separate and combined impacts of the pre-driver and last stage are explored, while discussing the superposition of the power supply induced jitter (PSIJ) induced by both the driver’s IO stages under small signal and large signal supply voltage variations. The linear superposition of the separate PSIJ effects by the pre-driver and last stage depends on the amplitude of the variation of the supply voltage that can drive the transistor to their nonlinear working regions. Full article

This paper presents a voltage-controlled delay unit (VCDU) with a novel architecture allowing for a wide input range of linearity and an improved immunity to electromagnetic interferences. The circuit is based on a current-starved inverter with a biasing technique to extend the input voltage range of linearity near to the rail-to-rail linearity range. The proposed scheme was designed by UMC 180 nm standard CMOS process and works without power-hungry amplifiers or comparators. It has a voltage supply of 1.8 V and exhibits a rail-to-rail linearity range (0–1.8 V) with an average EMI-induced jitter of only 1% of the nominal delay. Full article

This paper presents a neural-network based nonlinear behavioral modelling of I/O buffer that accounts for timing distortion introduced by nonlinear switching behavior of the predriver electrical circuit under power and ground supply voltage (PGSV) variations. Model structure and I/O device characterization along with extraction procedure were described. The last stage of the I/O buffer is modelled as nonlinear current-voltage (I-V) and capacitance voltage (C-V) functions capturing the nonlinear dynamic impedances of the pull-up and pull-down transistors. The mathematical model structure of the predriver was derived from the analysis of the large-signal electrical circuit switching behavior. Accordingly, a generic and surrogate multilayer neural network (NN) structure was considered in this work. Timing series data which reflects the nonlinear switching behavior of the multistage predriver’s circuit PGSV variations, were used to train the NN model. The proposed model was implemented in the time-domain solver and validated against the reference transistor level (TL) model and the state-of-the-art input-output buffer information specification (IBIS) behavioral model under different scenarios. The analysis of jitter was performed using the eye diagrams plotted at different metrics values. Full article