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Keywords = organotin(IV) semiconductor

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16 pages, 3337 KB  
Article
Development of Composite Semiconductor Films Based on Organotin Complexes Doped with Cobalt Porphine for Applications in Organic Diodes
by María Elena Sánchez Vergara, José Miguel Rocha Flores, Luis Alberto Cantera-Cantera, Ricardo Ballinas-Indilí, Alejandro Flores Huerta and Cecilio Álvarez-Toledano
Materials 2025, 18(1), 45; https://doi.org/10.3390/ma18010045 - 26 Dec 2024
Cited by 2 | Viewed by 1710
Abstract
In this work, we present the green synthesis of complex A–E derived from β-hidroxymethylidene indanones by ultrasound, which allowed for the obtaining of compounds in a shorter time and with good yields. These organotin complexes were then doped with cobalt porphine [...] Read more.
In this work, we present the green synthesis of complex A–E derived from β-hidroxymethylidene indanones by ultrasound, which allowed for the obtaining of compounds in a shorter time and with good yields. These organotin complexes were then doped with cobalt porphine and incorporated into a poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) matrix to manufacture composite semiconductor films. The semiconductor films were characterized through atomic force microscopy, examining their topography, Knoop hardness (around 17 HK), and tensile strength, which varied from 5 × 10−4 to 7 × 10−2 Pa. The optical behavior was evaluated, revealing that the changes in these characteristics are related to the type of organotin complex present in the composite film: the transmittance ranged from 77% to 86%, while the reflectance varied from 13% to 17%. The band gap, calculated using the Kubelka–Munk function F(KM), was approximately 3.7 ± 0.19 eV for all the semiconductor films. Finally, we assessed the electrical behavior of the composite films through current–voltage (I–V) measurements under different lighting conditions. The I–V curves demonstrated that they share a saturation current density of 3.46 mA/mm2. However, they differ in their conduction rates within the ohmic regimen. These composite films’ optical and electrical properties suggest their potential use in developing electronic devices like organic diodes. Full article
(This article belongs to the Special Issue Advances in Materials Science for Engineering Applications)
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14 pages, 3453 KB  
Article
Fabrication and Characterization of Hybrid Hole Transporting Layers of Organotin (IV) Semiconductors within Molybdenum Oxide/Poly(3,4-ethylenedyoxithiophene) Polystyrene Sulfonate Matrices
by María Elena Sánchez Vergara, César Raúl Monzón González, José Ramón Álvarez Bada, Leon Hamui and Cecilio Álvarez Toledano
Polymers 2022, 14(19), 4143; https://doi.org/10.3390/polym14194143 - 3 Oct 2022
Cited by 4 | Viewed by 2585
Abstract
The hybrid film of molybdenum oxide (MoO3) and poly(3,4-ethylenedyoxithiophene) polystyrene sulfonate (PEDOT:PSS) is a promising candidate for use as hole transport layer (HTL) in low-cost devices. A fast, controllable and economic process was used to fabricate high-performance HTLs by adding organotin [...] Read more.
The hybrid film of molybdenum oxide (MoO3) and poly(3,4-ethylenedyoxithiophene) polystyrene sulfonate (PEDOT:PSS) is a promising candidate for use as hole transport layer (HTL) in low-cost devices. A fast, controllable and economic process was used to fabricate high-performance HTLs by adding organotin (IV) semiconductors to the MoO3/PEDOT:PSS films. These hybrid films were fabricated by spin-coating and the MoO3/PEDOT:PSS-organotin (IV) complex films were characterized by infrared spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). Some mechanical and optical properties of the hybrid films were obtained and, to electrically characterize the hybrid films, hetero-junction glass/ITO/MoO3/PEDOT:PSS-organotin (IV) complex/Ag devices were prepared. Regarding the mechanical properties, the films have high plastic deformation, with a maximum stress of around 40 MPa and a Knoop hardness of 0.14. With respect to optical behavior, the films showed high transparency, with optical gap values between 2.8 and 3.5 eV and an onset gap of around 2.4 eV, typical of semiconductors. Additionally, the films in their respective devices show ambipolar and ohmic behavior with small differences depending on the substituent in organotin (IV) semiconductors. The MoO3/PEDOT:PSS matrix defines the mechanical behavior of the films and the tin complexes contribute their optoelectronic properties. Full article
(This article belongs to the Special Issue Polymer Films for Photovoltaic Applications II)
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