Search Results (8)

Titanium dioxide (TiO₂) is a wide-bandgap semiconductor material with broad application potential, known for its excellent photocatalytic performance, high chemical stability, low cost, and non-toxicity. These properties make it highly attractive for applications in photovoltaic energy, environmental remediation, and optoelectronic devices. For instance, TiO₂ is widely used as a photocatalyst for hydrogen production via water splitting and for degrading organic pollutants, thanks to its efficient photo-generated electron–hole separation. Additionally, TiO₂ exhibits remarkable performance in dye-sensitized solar cells and photodetectors, providing critical support for advancements in green energy and photoelectric conversion technologies. Boron-doped diamond (BDD) is renowned for its exceptional electrical conductivity, high hardness, wide electrochemical window, and outstanding chemical inertness. These unique characteristics enable its extensive use in fields such as electrochemical analysis, electrocatalysis, sensors, and biomedicine. For example, BDD electrodes exhibit high sensitivity and stability in detecting trace chemicals and pollutants, while also demonstrating excellent performance in electrocatalytic water splitting and industrial wastewater treatment. Its chemical stability and biocompatibility make it an ideal material for biosensors and implantable devices. Research indicates that the combination of TiO₂ nanostructures and BDD into heterostructures can exhibit unexpected optical and electrical performance and transport behavior, opening up new possibilities for photoluminescence and rectifier diode devices. However, applications based on this heterostructure still face challenges, particularly in terms of photodetector, photoelectric emitter, optical modulator, and optical fiber devices under high-temperature conditions. This article explores the potential and prospects of their combined heterostructures in the field of optoelectronic devices such as photodetector, light emitting diode (LED), memory, field effect transistor (FET) and sensing. TiO₂/BDD heterojunction can enhance photoresponsivity and extend the spectral detection range which enables stability in high-temperature and harsh environments due to BDD’s thermal conductivity. This article proposes future research directions and prospects to facilitate the development of TiO₂ nanostructured materials and BDD-based heterostructures, providing a foundation for enhancing photoresponsivity and extending the spectral detection range enables stability in high-temperature and high-frequency optoelectronic devices field. Further research and exploration of optoelectronic devices based on TiO₂-BDD heterostructures hold significant importance, offering new breakthroughs and innovations for the future development of optoelectronic technology. Full article

Recently, much research has focused on the search for new mixed donor–acceptor layers for applications in organic electronics. Organic heterostructures with layers based on the generation 1 poly(propylene thiophenoimine) (G1PPT) dendrimer, N,N′-diisopropylnaphthalene diimide (MNDI), and a combination of the two were prepared and their electrical properties were investigated. Single layers of G1PPT and MNDI and a mixed layer (G1PPT:MNDI) were obtained via spin coating on quartz glass, silicon, and glass/ITO substrates, using chloroform as a solvent. The absorption mechanism was investigated, the degree of disorder was estimated, and the emission properties of the layers were highlighted using spectroscopic methods (UV–Vis transmission and photoluminescence). The effects of the concentration and surface topographical particularities on the properties of the layers were analyzed via atomic force microscopy. All of the heterostructures realized with ITO and Au electrodes showed good conduction, with currents of the order of mA. Additionally, the heterostructure with a mixed layer exhibited asymmetry in the current–voltage curve between forward and reverse polarization in the lower range of the applied voltages, which was more significant at increased concentrations and could be correlated with rectifier diode behavior. Consequently, the mixed-layer generation 1 poly(propylene thiophenoimine) dendrimer with N,N′-diisopropylnaphthalene diimide can be considered promising for electronic applications. Full article

This paper presents innovations in green electronic and computing technologies. The importance and the status of the main subjects in green electronic and computing technologies are presented in this paper. In the last semicentennial, the planet suffered from rapid changes in climate. The planet is suffering from increasingly wild storms, hurricanes, typhoons, hard droughts, increases in seawater height, floods, seawater acidification, decreases in groundwater reserves, and increases in global temperatures. These climate changes may be irreversible if companies, organizations, governments, and individuals do not act daily and rapidly to save the planet. Unfortunately, the continuous growth in the number of computing devices, cellular devices, smartphones, and other smart devices over the last fifty years has resulted in a rapid increase in climate change. It is severely crucial to design energy-efficient “green” technologies and devices. Toxic waste from computing and cellular devices is rapidly filling up landfills and increasing air and water pollution. This electronic waste contains hazardous and toxic materials that pollute the environment and affect our health. Green computing and electronic engineering are employed to address this climate disaster. The development of green materials, green energy, waste, and recycling are the major objectives in innovation and research in green computing and electronics technologies. Energy-harvesting technologies can be used to produce and store green energy. Wearable active sensors and metamaterial antennas with circular split ring resonators (CSSRs) containing energy-harvesting units are presented in this paper. The measured bandwidth of the matched sensor is around 65% for VSWR, which is better than 3:1. The sensor gain is 14.1 dB at 2.62 GHz. A wideband 0.4 GHz to 6.4 GHz slot antenna with an RF energy-harvesting unit is presented in this paper. The Skyworks Schottky diode, SMS-7630, was used as the rectifier diode in the harvesting unit. If we transmit 20 dBm of RF power from a transmitting antenna that is located 0.2 m from the harvesting slot antenna at 2.4 GHz, the output voltage at the output port of the harvesting unit will be around 1 V. The power conversion efficiency of the metamaterial antenna dipole with metallic strips is around 75%. Wearable sensors with energy-harvesting units provide efficient, low-cost healthcare services that contribute to a green environment and minimize energy consumption. The measurement process and setups of wearable sensors are presented in this paper. Full article

InGaN-based red micro-light-emitting diodes (µLEDs) of different sizes were prepared in this work. The red GaN epilayers were grown on 4-inch sapphire substrates through metal-organic chemical vapor deposition (MOCVD). Etching, sidewall treatment, and p- and n-contact deposition were involved in the fabrication process. Initially, the etching process would cause undesirable damage to the GaN sidewalls, which leads to an increase in leakage current. Hence, we employed KOH wet treatment to rectify the defects on the sidewalls and conducted a comparative and systematic analysis of electrical as well as optical properties. We observed that the µLEDs with a size of 5 µm exhibited a substantial leakage current, which was effectively mitigated by the application of KOH wet treatment. In terms of optical performance, the arrays with KOH demonstrated improved light output power (LOP). Additionally, while photoelectric performance exhibited a decline with increased current density, the devices treated with KOH consistently outperformed their counterparts in terms of optoelectronic efficiency. It is noteworthy that the optimized devices displayed enhanced photoelectric characteristics without significantly altering their original peak wavelength and FWHM. Our findings point to the elimination of surface non-radiative recombination by KOH wet treatment, thereby enhancing the performance of small-sized red µLEDs, which has significant potential in realizing full-color micro-displays in near-eye projection applications. Full article

In this work, the charge transport properties of organic vanadyl 3,10,17,24-tetra-tert-butyl-1,8,15,22-tetrakis(dimethylamino)-29H,31H phthalocyanine (VTP) were investigated. The I-V profile demonstrated by single VTP shows a rectifying behavior, and Schottky diode parameters such as the ideality factor, barrier height, shunt, and series resistance were calculated. Further, the charge transport behavior of single-layer VTP and its blend with phenyl C71 butyric acid methyl ester (PC₇₁BM) was evaluated using the I-V conventional method and diode analysis. In addition, the optimized diode properties of VTP: PC₇₁BM were chosen to evaluate its photovoltaic effect. The current density-voltage (J-V) characteristics were evaluated in both dark and light conditions to determine the key parameters of the photovoltaic effect. The results indicate the optimized VTP: the PC₇₁BM composite blend yielded a relatively low photovoltaic efficiency. However, due to the presence of extended ligands, it gives a very good sensitivity when applied in the organic photodetector device, as reported in our previous work. Full article

In this work, we demonstrate P3HT (poly 3-hexylthiophene) organic rectifier diode both in rigid and flexible substrate with a rectification ratio up to 10⁶. This performance has been achieved through tuning the work function of gold with a self-assembled monolayer of 2,3,4,5,6-pentafluorobenzenethiol (PFBT). The diode fabricated on flexible paper substrate shows a very good electrical stability under bending tests and the frequency response is estimated at more than 20 MHz which is sufficient for radio frequency identification (RFID) applications. It is also shown that the low operating voltage of this diode can be a real advantage for use in a rectenna for energy harvesting systems. Simulations of the diode structure show that it can be used at GSM and Wi-Fi frequencies if the diode capacitance is reduced to a few pF and its series resistance to a few hundred ohms. Under these conditions, the DC voltages generated by the rectenna can reach a value up to 1 V. Full article

The growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices. In this paper, we reported the growth of GaN-based light-emitting diodes (LEDs) on amorphous SiO₂ substrate with the use of nanorods and graphene buffer layers by metal organic chemical vapor deposition (MOCVD). The effect of different growth parameters on the morphology and vertical-to-lateral aspect ratio of nanorods was discussed by analyzing growth kinetics. Furthermore, we tuned nanorod coalescence to obtain continuous GaN films with a blue-LED structure by adjusting growth conditions. The GaN films exhibited a hexagonal wurtzite structure and aligned c-axis orientation demonstrated by X-ray diffractometer (XRD), Raman, and transmission electron microscopy (TEM) results. Finally, five-pair InGaN/GaN multi-quantum-wells (MQWs) were grown. The photoluminescence (PL) showed an intense emission peak at 475 nm, and the current–voltage (I-V) curve shows a rectifying behavior with a turn-on voltage of 5.7 V. This work provides a promising fabrication method for the large-area and low-cost GaN-based devices on amorphous substrates and opens up the further possibility of nitride integration with Si (100) complementary metal oxide semiconductor (CMOS) electronics. Full article

Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al)/DNA/silicon (Si) rectifying junctions using their current-voltage (I-V) characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0) was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min). These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors. Full article