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Search Results (3)

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Keywords = optoelectronic integrated sensor high irradiance responsivity

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16 pages, 5677 KB  
Article
Development of an Optoelectronic Integrated Sensor for a MEMS Mirror-Based Active Structured Light System
by Xiang Cheng, Shun Xu, Yan Liu, Yingchao Cao, Huikai Xie and Jinhui Ye
Micromachines 2023, 14(3), 561; https://doi.org/10.3390/mi14030561 - 27 Feb 2023
Cited by 3 | Viewed by 3044
Abstract
Micro-electro-mechanical system (MEMS) scanning micromirrors are playing an increasingly important role in active structured light systems. However, the initial phase error of the structured light generated by a scanning micromirror seriously affects the accuracy of the corresponding system. This paper reports an optoelectronic [...] Read more.
Micro-electro-mechanical system (MEMS) scanning micromirrors are playing an increasingly important role in active structured light systems. However, the initial phase error of the structured light generated by a scanning micromirror seriously affects the accuracy of the corresponding system. This paper reports an optoelectronic integrated sensor with high irradiance responsivity and high linearity that can be used to correct the phase error of the micromirror. The optoelectronic integrated sensor consists of a large-area photodetector (PD) and a receiving circuit, including a post amplifier, an operational amplifier, a bandgap reference, and a reference current circuit. The optoelectronic sensor chip is fabricated in a 180 nm CMOS process. Experimental results show that with a 5 V power supply, the optoelectronic sensor has an irradiance responsivity of 100 mV/(μW/cm2) and a −3 dB bandwidth of 2 kHz. The minimal detectable light power is about 19.4 nW, which satisfies the requirements of many active structured light systems. Through testing, the application of the chip effectively reduces the phase error of the micromirror to 2.5%. Full article
(This article belongs to the Special Issue Optical MEMS, Volume III)
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15 pages, 3929 KB  
Article
Chaotic Signatures Exhibited by Plasmonic Effects in Au Nanoparticles with Cells
by Hilario Martines-Arano, Blanca Estela García-Pérez, Mónica Araceli Vidales-Hurtado, Martín Trejo-Valdez, Luis Héctor Hernández-Gómez and Carlos Torres-Torres
Sensors 2019, 19(21), 4728; https://doi.org/10.3390/s19214728 - 31 Oct 2019
Cited by 16 | Viewed by 4956
Abstract
The evolution of the optical absorptive effects exhibited by plasmonic nanoparticles was systematically analyzed by electronic signals modulated by a Rössler attractor system. A sol-gel approach was employed for the preparation of the studied Au nanoparticles embedded in a TiO2 thin solid [...] Read more.
The evolution of the optical absorptive effects exhibited by plasmonic nanoparticles was systematically analyzed by electronic signals modulated by a Rössler attractor system. A sol-gel approach was employed for the preparation of the studied Au nanoparticles embedded in a TiO2 thin solid film. The inclusion of the nanoparticles in an inhomogeneous biological sample integrated by human cells deposited in an ITO glass substrate was evaluated with a high level of sensitivity using an opto-electronic chaotic circuit. The optical response of the nanoparticles was determined using nanosecond laser pulses in order to guarantee the sensing performance of the system. It was shown that high-intensity irradiances at a wavelength of 532 nm could promote a change in the absorption band of the localized surface plasmon resonance associated with an increase in the nanoparticle density of the film. Moreover, it was revealed that interferometrically-controlled energy transfer mechanisms can be useful for thermo-plasmonic functions and sharp selective optical damage induced by the vectorial nature of light. Immediate applications of two-wave mixing techniques, together with chaotic effects, can be contemplated in the development of nanostructured sensors and laser-induced controlled explosions, with potential applications for biomedical photo-thermal processes. Full article
(This article belongs to the Section Biosensors)
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8 pages, 2169 KB  
Article
GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate
by Chang-Ju Lee, Chul-Ho Won, Jung-Hee Lee, Sung-Ho Hahm and Hongsik Park
Sensors 2019, 19(5), 1051; https://doi.org/10.3390/s19051051 - 1 Mar 2019
Cited by 17 | Viewed by 5212
Abstract
The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (UV) imaging devices, a hybrid-type integration [...] Read more.
The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (UV) imaging devices, a hybrid-type integration process is typically utilized, which involves a backside substrate etching and a wafer-to-wafer bonding process. In this work, we developed a GaN-based UV passive pixel sensor (PPS) by integrating a GaN metal-semiconductor-metal (MSM) UV photodetector and a Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) on an epitaxially grown GaN layer on silicon substrate. An MSM-type UV sensor had a low dark current density of 3.3 × 10−7 A/cm2 and a high UV/visible rejection ratio of 103. The GaN SB-MOSFET showed a normally-off operation and exhibited a maximum drain current of 0.5 mA/mm and a maximum transconductance of 30 μS/mm with a threshold voltage of 4.5 V. The UV PPS showed good UV response and a high dark-to-photo contrast ratio of 103 under irradiation of 365-nm UV. This integration technique will provide one possible way for a monolithic integration of the GaN-based optoelectronic devices. Full article
(This article belongs to the Special Issue Image Sensors)
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