Search Results (8)

Advanced oxidation catalyzed by metal oxides is a promising approach for degrading organic pollutants in wastewater. A critical strategy to enhance the performance of these catalysts is optimizing the dispersion of their active components through innovative synthesis methods. In this study, we report a one-pot synthesis of g-C₃N₄ nanomeshes supported with highly dispersed VO₂ catalysts (V-g-C₃N₄) for the advanced oxidation of methylene blue (MB). The characterization results reveal that the involvement of VCl₃ in the pyrolysis of melamine facilitates the formation of g-C₃N₄ nanomeshes with abundant amino groups (NH/NH₂). The strong interaction between vanadia species and amino groups prevents VO₂ particles from agglomerating, resulting in a significantly higher vanadia dispersion than V-g-C₃N₄-im synthesized via the traditional impregnation method. V-g-C₃N₄ exhibits a sophisticated microstructure and surface structure, which leads to a rate constant 2.3-fold higher than V-g-C₃N₄-im in the catalytic degradation of methylene blue using H₂O₂ as the oxidant. X-ray photoelectron spectroscopy, trapping experiments, and electron paramagnetic resonance measurements reveal that the rapid adsorption and fast diffusion of MB over g-C₃N₄ nanomeshes, together with the efficient H₂O₂ activation into ·OH radicals via the V⁴⁺/V⁵⁺ redox cycle, synergistically contribute to the superior MB removal efficiency of V-g-C₃N₄. Moreover, V-g-C₃N₄ demonstrates no significant decrease in activity even after the fourth cycle, indicating its excellent stability during the pollutant removal process. Full article

We demonstrate two distinct experimental processes involving the large-area growth of ordered and disordered silicon nanowire arrays (SiNWs) on a p-type silicon substrate using the metal-assisted chemical etching method. The two processes are based on the etching of monocrystalline silicon wafers by randomly distributed Ag films and ultra-thin Au films with ordered nano-mesh arrays, respectively, wherein the growth of SiNWs is implemented using a specific proportion of a HF-containing solution at room temperature. In this study, the microstructural change mechanisms for the two morphologically different arrays before and after annealing were investigated using Raman spectra. The effects of various mechanisms on the observed Raman scattering peak’s deviation from symmetry, redshift and broadening were analyzed. The evolution of the unstable amorphous structures of nanoscale materials during the high-temperature annealing process was observed via high-resolution scanning electron microscope (SEM) observations. The scattering peak parameters determined from the Raman spectra led to conclusions concerning the various mechanisms by which high-temperature annealing influences the microstructures of the two morphologically different SiNWs fabricated on the p-type silicon substrate. Therefore, the deviation of SiNWs from the monocrystalline silicon scattering peak at 520.05 cm⁻¹ when changing the diameter of the nanowire columns was calculated to further analyze the effect of thermal annealing on Raman characteristics. Full article

Junction networks made of longitudinally connected metal oxide nanowires (MOx NWs) have been widely utilized in resistive-type gas sensors because the potential barrier at the NW junctions leads to improved gas sensing performances. However, conventional MOx–NW-based gas sensors exhibit limited gas access to the sensing sites and reduced utilization of the entire NW surfaces because the NW networks are grown on the substrate. This study presents a novel gas sensor platform facilitating the formation of ZnO NW junction networks in a suspended architecture by growing ZnO NWs radially on a suspended carbon mesh backbone consisting of sub-micrometer-sized wires. NW networks were densely formed in the lateral and longitudinal directions of the ZnO NWs, forming additional longitudinally connected junctions in the voids of the carbon mesh. Therefore, target gases could efficiently access the sensing sites, including the junctions and the entire surface of the ZnO NWs. Thus, the present sensor, based on a suspended network of longitudinally connected NW junctions, exhibited enhanced gas response, sensitivity, and lower limit of detection compared to sensors consisting of only laterally connected NWs. In addition, complete sensor structures consisting of a suspended carbon mesh backbone and ZnO NWs could be prepared using only batch fabrication processes such as carbon microelectromechanical systems and hydrothermal synthesis, allowing cost-effective sensor fabrication. Full article

This review aims to give a general overview of the recent use of tungsten-based catalysts for wide environmental applications, with first some useful background information about tungsten oxides. Tungsten oxide materials exhibit suitable behaviors for surface reactions and catalysis such as acidic properties (mainly Brønsted sites), redox and adsorption properties (due to the presence of oxygen vacancies) and a photostimulation response under visible light (2.6–2.8 eV bandgap). Depending on the operating condition of the catalytic process, each of these behaviors is tunable by controlling structure and morphology (e.g., nanoplates, nanosheets, nanorods, nanowires, nanomesh, microflowers, hollow nanospheres) and/or interactions with other compounds such as conductors (carbon), semiconductors or other oxides (e.g., TiO₂) and precious metals. WO_x particles can be also dispersed on high specific surface area supports. Based on these behaviors, WO₃-based catalysts were developed for numerous environmental applications. This review is divided into five main parts: structure of tungsten-based catalysts, acidity of supported tungsten oxide catalysts, WO₃ catalysts for DeNO_x applications, total oxidation of volatile organic compounds in gas phase and gas sensors and pollutant remediation in liquid phase (photocatalysis). Full article

High sensitivity detection of terahertz waves can be achieved with a graphene nanomesh as grating to improve the coupling efficiency of the incident terahertz waves and using a graphene nanostructure energy gap to enhance the excitation of plasmon. Herein, the fabrication process of the FET THz detector based on the rectangular GNM (r-GNM) is designed, and the THz detector is developed, including the CVD growth and the wet-process transfer of high quality monolayer graphene films, preparation of r-GNM by electron-beam lithography and oxygen plasma etching, and the fabrication of the gate electrodes on the Si₃N₄ dielectric layer. The problem that the conductive metal is easy to peel off during the fabrication process of the GNM THz device is mainly discussed. The photoelectric performance of the detector was tested at room temperature. The experimental results show that the sensitivity of the detector is 2.5 A/W (@ 3 THz) at room temperature. Full article

Metallic nanomesh, one of the emerging transparent conductive film (TCF) materials with both high electrical conductivity and optical transmittance, shows great potential to replace indium tin oxide (ITO) in optoelectronic devices. However, lithography-fabricated metallic nanomeshes suffer from an iridescence problem caused by the optical diffraction of periodic nanostructures, which has negative effects on display performance. In this work, we propose a novel approach to fabricate large-scale metallic nanomesh as TCFs on flexible polyethylene terephthalate (PET) sheets by maskless phase separation lithography of polymer blends in a low-cost and facile process. Polystyrene (PS)/polyphenylsilsequioxane (PPSQ) polymer blend was chosen as resist material for phase separation lithography due to their different etching selectivity under O₂ reactive ion etching (RIE). The PS constituent was selectively removed by O₂ RIE and the remained PPSQ nanopillars with varying sizes in random distribution were used as masks for further pattern transfer and metal deposition process. Gold (Au) nanomeshes with adjustable nanostructures were achieved after the lift-off step. Au nanomesh exhibited good optoelectronic properties (R_S = 41 Ω/sq, T = 71.9%) and non-iridescence, without angle dependence owing to the aperiodic structures of disordered apertures. The results indicate that this Au nanomesh has high potential application in high-performance and broad-viewing-angle optoelectronic devices. Full article

The development of non-noble metal hydrogen evolution catalysts that can replace Pt is crucial for efficient hydrogen production. Herein, we develop a type of well-dispersed Ni₂P on N-doped nanomesh carbon (NC) electrocatalyst by a facile pyrolysis method, which shows excellent hydrogen evolution reaction (HER) catalytic performance. It is rather remarkable that the overpotential of Ni₂P/NC prepared under optimal proportion is 108 mV at 10 mA·cm⁻² current density in 1 M KOH solution with the tafel slope of 67.3 mV·dec⁻¹, the catalytic activity has no significant attenuation after 1000 cycles of cyclic voltammetry (CV)method. The hydrogen evolution performance of the electrocatalytic is better than most similar catalysts in alkaline media. The unique mesh structure of the carbon component in the catalyst facilitates the exposure of the active site and reduces the impedance, which improves the efficiency of electron transport as well as ensuring the stability of the hydrogen evolution reaction. In addition, we prove that nitrogen doping and pore structure are also important factors affecting catalytic activity by control experiments. Our results show that N-doped nanomesh carbon, as an efficient support, combined with Ni₂P nanoparticles is of great significance for the development of efficient hydrogen evolution electrodes. Full article

Silicon nanowires (SiNWs) arrays have become one of low-dimensional structural nanomaterials for the preparation of high-performance optoelectronic devices with the advantages of highly efficient light trapping effect, carrier multiplication, and adjustable optical bandgap. The controlled growth of SiNWs determines their electrical and optical properties. The morphology of silicon nanowires fabricated by conventional metal-assisted chemical etching (MACE) involving the Ag-based etching process cannot be precisely controlled. Ultra-thin anodic aluminum oxide (AAO) is one of the new-pattern nanostructure assembly systems for the synthesis of nanomaterials. The synthesized nanostructure arrays can be tuned to exhibit different optical and electrical properties in a certain wavelength range by adjusting the AAO membrane parameters. In this paper, we demonstrate an ultra-thin Au nano-meshes array from a single hexagonal AAO membrane as a replication master instead of conventional Ag particles as etching catalyst. The extended ordered silicon nanowires arrays are fabricated by the selective chemical dissolution of nanoscale noble metal meshes that exhibit excellent anti-reflection performance in broadband wavelengths and a wide incidence angle. Full article