Search Results (8)

As semiconductor process nodes shrink to 3 nm and beyond, traditional optical proximity correction (OPC) and resolution enhancement technologies (RETs) can no longer meet the high patterning precision needs of advanced chip manufacturing due to the sub-wavelength lithography limits. Inverse lithography technology (ILT), a key part of computational lithography, has become a critical solution for these issues. From an EDA industry perspective, this review provides an original and systematic summary of ILT’s development and applications, which helps integrate the scattered research into a clear framework for both academic and industrial use. Compared with traditional OPC, the latest ILT has three main advantages: (1) better patterning accuracy, as a result of the precise optical models that fix complex optical issues (like diffraction and interference) in advanced lithography systems; (2) a wider process window, as it optimizes mask designs by working backwards from the target wafer patterns, making lithography more stable against process changes; and (3) stronger adaptability to new lithography scenarios, such as High-NA EUV and extended DUV nodes. This review first explains ILT’s working principles (the basic concepts, mathematical formulae, and main methods like level-set and pixelated approaches) and its development history, highlighting key events that boosted its progress. It then analyzes ILT’s current application status in the industry (such as hotspot fixing, full-chip trials, and EUV-era use) and its main bottlenecks: a high computational complexity leading to long runtime, difficulties in mask manufacturing, challenges in model calibration, and a conservative market that slows large-scale adoption. Finally, it discusses promising future directions, including hybrid ILT-OPC-SMO strategies, improving model accuracy, AI/ML-driven design, GPU acceleration, multi-beam mask writer improvements, and open-source data to solve data shortage problems. By combining the latest research and industry practices, this review fills the gap of comprehensive ILT summaries that cover the principles, progress, applications, and prospects. It helps readers fully understand ILT’s technical landscape and offers practical insights for solving the key challenges, thus promoting ILT’s industrial use in advanced chip manufacturing. Full article

In advanced semiconductor manufacturing, computational lithography, particularly sub-resolution assist features (SRAFs), is crucial for enhancing the process window. However, conventional SRAF placement methodologies are hampered by a critical trade-off between speed and pattern fidelity, and they largely fail to optimize the complex, curvilinear layouts essential for advanced nodes. This study develops a deep learning framework to replace and drastically accelerate the optical refinement of SRAF shapes. We established a large-scale dataset with coarse, binarized SRAF patterns as inputs. Ground-truth labels were generated via an Level-Set Method (LSM) optimized purely for optical performance. A U-Net convolutional neural network was then trained to learn the mapping from the coarse inputs to the optically optimized outputs. Experimental results demonstrate a dual benefit: the model provides a multi-order-of-magnitude acceleration over traditional CPU-based methods and is significantly faster than modern GPU-accelerated algorithms while achieving a final pattern fidelity highly comparable to the computationally expensive LSM. The U-Net-generated SRAFs exhibit high fidelity to the ground-truth layouts and comparable optical performance. Our findings demonstrate that a data-driven surrogate can serve as an effective alternative to traditional algorithms for SRAF optical refinement. This represents a promising approach to mitigating computational costs in mask synthesis and provides a solid foundation for future integrated optimization solutions. Full article

With the continuous scaling-down of integrated circuit feature sizes, inverse lithography technology (ILT), as the most groundbreaking resolution enhancement technique (RET), has become crucial in advanced semiconductor manufacturing. By directly optimizing mask patterns through inverse computation rather than rule-based local corrections, ILT can more accurately approximate target design patterns while extending the process window. However, current mainstream ILT approaches—whether machine learning-based or gradient descent-based—all face the challenge of balancing mask optimization quality and computational time. Moreover, ILT often faces a trade-off between imaging fidelity and manufacturability; fidelity-prioritized optimization leads to explosive growth in mask complexity, whereas manufacturability constraints require compromising fidelity. To address these challenges, we propose an iterative deep learning-based ILT framework incorporating a lightweight model, ghost and adaptive attention U-net (EAAUnet) to accelerate runtime and reduce computational overhead while progressively improving mask quality through multiple iterations based on the pre-trained network model. Compared to recent state-of-the-art (SOTA) ILT solutions, our approach achieves up to a 39% improvement in mask quality metrics. Additionally, we introduce a mask constraint scheme to regulate complex SRAF (sub-resolution assist feature) patterns on the mask, effectively reducing manufacturing complexity. Full article

Inverse lithography technology (ILT) based on the gradient descent (GD) algorithm, which is a classical local optimal method, can effectively improve the lithographic imaging fidelity. However, due to the low-pass filtering effect of the lithography imaging system, GD, although able to converge quickly, is prone to fall into the local optimum for the information in the corner region of complex patterns. Considering the high-frequency information of the corner region during the optimization process, this paper proposes a resolution layering method to improve the efficiency of GD-based ILT algorithms. A corner-rounding-inspired target retargeting strategy is used to compensate for the over-optimization defect of GD for inversely optimizing the complex pattern layout. Furthermore, for ensuring the manufacturability of masks, differentiable top-hat and bottom-hat operations are employed to improve the optimization efficiency of the proposed method. To confirm the superiority of the proposed method, multiple optimization methods of ILT were compared. Numerical experiments show that the proposed method has higher optimization efficiency and effectively avoids the over-optimization. Full article

Inverse lithography technology (ILT) plays a pivotal role in advanced semiconductor manufacturing because it enables pixel-level mask modifications, significantly enhances pattern fidelity, and expands process windows. However, traditional gradient-based ILT methods often struggle with the trade-off between imaging fidelity and mask manufacturability due to coupled optimization objectives. We propose a frequency-separated dual-stage optimization framework (FD-ILT) that strategically decouples these conflicting objectives by exploiting the inherent low-pass characteristics of lithographic systems. The first stage optimizes low-frequency (LF) components using hierarchical downsampling to generate a high-fidelity continuous transmission mask. This approach reduces computational complexity while refining resolution progressively. The second stage enforces manufacturability by exclusively adjusting high-frequency (HF) features through morphological regularization and progressive binarization penalties while maintaining the mask LF to preserve imaging accuracy. Our method achieves simultaneous control of both aspects by eliminating gradient conflicts between fidelity and manufacturing constraints. The simulation results demonstrate that FD-ILT achieves superior imaging quality and manufacturability compared to conventional gradient-based ILT methods, offering a scalable solution for advanced semiconductor nodes. Full article

This review surveys and summarizes the materials and methods used to make liquid filtration membranes. Examples of each method including phase inversion, electrospinning, interfacial polymerization, thin film composites, stretching, lithography and templating techniques, are given and the pros and cons of each method are discussed. Trends of recent literature are also discussed and their potential direction is deliberated. Furthermore, the polymeric materials used in the fabrication process of liquid filtration membranes are also reviewed and trends and similarities are shown and discussed. Thin film composites and selective filtration applications appear to be a growing area of research for membrane technology. Other than the required mechanical properties (tensile strength, toughness and chemical and thermal stability), it becomes apparent that polymer solubility and hydropathy are key factors in determining their applicability for use as a membrane material. Full article

Photonic technologies are nowadays dominated by highly performing inorganic structures that are commonly fabricated via lithography or epitaxial growths. Unfortunately, the fabrication of these systems is costly, time consuming, and does not allow for the growth of large photonic structures. All-polymer photonic crystals could overcome this limitation thanks to easy solubility and melt processing. On the other hand, macromolecules often do not offer a dielectric contrast large enough to approach the performances of their inorganic counterparts. In this work, we demonstrate a new approach to achieve high dielectric contrast distributed Bragg reflectors with a photonic band gap that is tunable in a very broad spectral region. A highly transparent medium was developed through a blend of a commercial polymer with a high refractive index inverse vulcanized polymer that is rich in sulfur, where the large polarizability of the S–S bond provides refractive index values that are unconceivable with common non-conjugated polymers. This approach paves the way to the recycling of sulfur byproducts for new high added-value nano-structures. Full article

The continuous decrease in the size of lithographic technology nodes has led to the development of source and mask optimization (SMO) and also to the control of defocus becoming stringent in the actual lithography process. Due to multi-factor impact, defocusing is always changeable and uncertain in the real exposure process. But conventional SMO assumes the lithography system is ideal, which only compensates the optical proximity effect (OPE) in the best focus plane. Therefore, to solve the inverse lithography problem with more uniformity of pattern in different defocus variations, we proposed a defocus robust SMO (DRSMO) approach that is driven by a defocus sensitivity penalty function for the first time. This multi-objective optimization samples a wide range of defocus disturbances and it can be proceeded by the mini-batch gradient descent (MBGD) algorithm effectively. The simulation results showed that a more robust defocus source and mask can be designed through DRSMO optimization. The defocus sensitivity factor s_β maximally decreased 63.5% compared to conventional SMO, and due to the low error sensitivity and the depth of defocus (DOF), the process window (PW) was further enlarged effectively. Compared to conventional SMO, the exposure latitude (EL) maximally increased from 4.5% to 10.5% and DOF maximally increased 54.5% (EL = 5%), which proved the validity of the DRSMO method in improving the focusing performance. Full article