Search Results (2)

High power radiofrequencies may transiently or permanently disrupt the functioning of electronic devices, but their effect on living systems remains unknown. With the aim to evaluate the safety and biological effects of narrow-band and wide-band high-power electromagnetic (HPEM) waves, we studied their effects upon exposure of healthy and tumor-bearing mice. In field experiments, the exposure to 1.5 GHz narrow-band electromagnetic fields with the incident amplitude peak value level in the range of 40 kV/m and 150 MHz wide-band electric fields with the amplitude peak value in the range of 200 kV/m, did not alter healthy and tumor-bearing animals’ growth, nor it had any impact on cutaneous murine tumors’ growth. While we did not observe any noticeable behavioral changes in mice during the exposure to narrow-band signals when wide-band HPEM signals were applied, mice could behave in a similar way as they respond to loud noise signals: namely, if a mouse was exploring the cage prior to signal application, it returned to companion mates when wide-band HPEM signals were applied. Moreover, the effect of wide-band signals was assessed on normal blood vessels permeability in real-time in dorsal-chamber-bearing mice exposed in a pilot study using wide-band signal applicators. Our pilot study conducted within the applicator and performed at the laboratory scale suggests that the exposure to wide-band signals with the amplitude of 47.5 kV/m does not result in increased vessel permeability. Full article

The failure threshold time of semiconductors caused by the impact of irradiated high-power electromagnetic waves (HPEM) is experimentally studied. A SN7442 integrated circuit (IC) is placed in an emulator with a WR430 closed waveguide and is irradiated by HPEM generated from a magnetron oscillator. The state of the SN7442 component is observed by a light-emitting diode (LED) detector and the voltage measured in the SN7442 component. As the magnitude of the electric field in the HPEM is varied from 24 kV/m to 36 kV/m, the failure threshold time falls from 195 s to 17 s with dependence of the irradiated electric field (E) on the failure threshold time (T) from T~E⁻¹² to a T~E⁻⁶. Full article