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Advances in 2D Group IV Monochalcogenides: Synthesis, Properties, and Applications

by Angel-Theodor Buruiana, Claudia Mihai, Victor Kuncser and Alin Velea

Materials 2025, 18(7), 1530; https://doi.org/10.3390/ma18071530 - 28 Mar 2025

Cited by 2 | Viewed by 1775

The field of newly developed two-dimensional (2D) materials with low symmetry and structural in-plane anisotropic properties has grown rapidly in recent years. The phosphorene analog of group IV monochalcogenides is a prominent subset of this group that has attracted a lot of attention because of its unique in-plane anisotropic electronic and optical properties, crystalline symmetries, abundance in the earth’s crust, and environmental friendliness. This article presents a review of the latest research advancements concerning 2D group IV monochalcogenides. It begins with an exploration of the crystal structures of these materials, alongside their optical and electronic properties. The review continues by discussing the various techniques employed for the synthesis of layered group IV monochalcogenides, including both bottom-up methods such as vapor-phase deposition and top-down techniques like mechanical and/or liquid-phase exfoliation. In the final part, the article emphasizes the application of 2D group IV monochalcogenides, particularly in the fields of photocatalysis, photodetectors, nonlinear optics, sensors, batteries, and photovoltaic cells. Full article

(This article belongs to the Section Optical and Photonic Materials)

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11 pages, 1865 KB

Open AccessArticle

High-Performance Self-Driven SnSe/Si Heterojunction Photovoltaic Photodetector

by Fuwen Luo, Hongxi Zhou, Yuxuan Liu, Yao Xu, Zhiheng Zhang, Chao Chen and Jun Wang

Chemosensors 2023, 11(7), 406; https://doi.org/10.3390/chemosensors11070406 - 19 Jul 2023

Cited by 6 | Viewed by 2615

Abstract

Tin monoselenide (SnSe), which belongs to group IV–VI monochalcogenides, has obtained significant attention in the field of photodetection owing to its ultrahigh carrier mobilities. However, the great challenges of preparing high-quality films and high-performance devices still need to be conquered. Herein, high-density continuous SnSe films were deposited on a Si substrate using magnetron sputtering technology, and a self-driven photovoltaic-type broadband photodetector from the visible light range (VIS) to the near-infrared (NIR) range based on SnSe/Si heterojunction was constructed. Owing to its high carrier mobility, narrow band gap structure, and strong internal electric field, the SnSe/Si heterojunction device exhibits an ultrafast response and high responsivity (R), which achieves a wide spectral response of 405–980 nm. Under zero bias voltage, the greatest R and detectivity (D*) of the heterojunction were 704.6 mA/W and 3.36 ×

10^{11}

Jones at 405 nm. Furthermore, the device had a fast response time (rise time) of 20.4 μs at 980 nm of illumination. This work provides a new strategy for the fabrication of high-performance, low-cost, and self-driven photodetectors. Full article

(This article belongs to the Section Electrochemical Devices and Sensors)

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12 pages, 3556 KB

Open AccessArticle

First-Principles Calculations of Angular and Strain Dependence on Effective Masses of Two-Dimensional Phosphorene Analogues (Monolayer α-Phase Group-IV Monochalcogenides MX)

by Yuanfeng Xu, Ke Xu and Hao Zhang

Molecules 2019, 24(3), 639; https://doi.org/10.3390/molecules24030639 - 12 Feb 2019

Cited by 17 | Viewed by 5328

Abstract

Group IV monochalcogenides

M X

(M = Ge, Sn; X = S, Se)-semiconductor isostructure to black phosphorene-have recently emerged as promising two-dimensional materials for ultrathin-film photovoltaic applications owing to the fascinating electronic and optical properties. Herein, using first-principles calculations, we systematically investigate [...] Read more.

Group IV monochalcogenides

M X

M X

. Based on analysis on the orbital-projected band structure, the VBMs are found to be dominantly contributed from the

p_{z}

orbital of X atom, while the CBM is mainly dominated by

p_{x}

p_{y}

orbital of M atom. 2D SnS has the largest anisotropy ratio due to the lacking of s orbital contribution which increases the anisotropy. Moreover, the electron/hole effective masses along the x direction have the steeper tendency of increase under the uniaxial tensile strain compared to those along y direction. Full article

(This article belongs to the Special Issue Black Phosphorus: Application in Materials Science)

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