Search Results (6)

Germanium-tin (GeSn) alloy is considered a promising candidate for a Si-based short-wavelength infrared range (SWIR) detector and laser source due to its excellent carrier mobility and bandgap tunability. Pulsed laser annealing (PLA) is one of the preeminent methods for preparing GeSn crystal films with high Sn content. However, current reports have not systematically investigated the effect of different pulse-width lasers on the crystalline quality of GeSn films. In addition, the intensity of the spot follows the gaussian distribution. As a result, various regions would have different crystalline properties. Therefore, in this study, we first provide the Raman spectra of several feature regions in the ablation state for single spot processing with various pulse-width lasers (continuous-wave, nanosecond, femtosecond). Furthermore, the impact of laser pulse width on the crystallization characteristics of GeSn film is explored for different single-spot processing states, particularly the Sn content incorporated into GeSn crystals. The transient heating time of the film surface and the faster non-equilibrium transition of the surface temperature inhibit the segregation of the Sn component. By comparing the Raman spectra of the pulsed laser, the continuous-wave laser shows the most acute Sn segregation phenomenon, with the lowest Sn content of approximately 2%. However, the femtosecond laser both ensures crystallization of the film and effective suppression of Sn expulsion from the lattices, and the content of Sn is 8.07%, which is similar to the origin of GeSn film. Full article

Due to the ever-growing importance of rechargeable lithium-ion batteries, the development of electrode materials and their processing techniques remains a hot topic in academia and industry. Even the well-developed and widely utilized active materials present issues, such as surface reactivity, irreversible capacity in the first cycle, and ageing. Thus, there have been many efforts to modify the surface of active materials to enhance the electrochemical performance of the resulting electrodes and cells. Herein, we review the attempts to use polymer coatings on the anode active materials. This type of coating stands out because of the possibility of acting as an artificial solid electrolyte interphase (SEI), serving as an anode protective layer. We discuss the prominent examples of anodes with different mechanisms: intercalation (graphite and titanium oxides), alloy (silicon, tin, and germanium), and conversion (transition metal oxides) anodes. Finally, we give our perspective on the future developments in this field. Full article

Silicon–germanium (SiGe) alloys have sparked a great deal of attention due to their exceptional high-temperature thermoelectric properties. Significant effort has been expended in the quest for high-temperature thermoelectric materials. Combining density functional theory and electron–phonon coupling theory, it was discovered that silicon–tin (SiSn) alloys have remarkable high-temperature thermoelectric performance. SiSn alloys have a figure of merit above 2.0 at 800 K, resulting from their high conduction band convergence and low lattice thermal conductivity. Further evaluations reveal that Si_0.75Sn_0.25 is the best choice for developing the optimum ratio as a thermoelectric material. These findings will provide a basis for further studies on SiSn alloys as a potential new class of high-performance thermoelectric materials. Full article

Compositionally controlled, light-emitting, group IV semiconductor nanomaterials have potential to enable on-chip data communications and infrared (IR) imaging devices compatible with the complementary metal−oxide−semiconductor (CMOS) technology. The recent demonstration of a direct band gap laser in Ge-Sn alloys opens avenues to the expansion of Si-photonics. Ge-Sn alloys showed improved effective carrier mobility as well as direct band gap behavior at Sn composition above 6–11%. In this work, Ge_1−xSn_x alloy nanoparticles with varying Sn compositions from x = 0.124 to 0.178 were prepared via colloidal synthesis using sodium borohydride (NaBH₄), a mild and non-hazardous reducing reagent. Successful removal of the synthesized long-alkyl-chain ligands present on nanoparticles’ surfaces, along with the passivation of the Ge-Sn nanoparticle surface, was achieved using aqueous (NH₄)₂S. The highly reactive surface of the nanoparticles prior to ligand exchange often leads to the formation of germanium oxide (GeO₂). This work demonstrates that the (NH₄)₂S further acts as an etching reagent to remove the oxide layer from the particles’ surfaces. The compositional control and long-term stability will enable the future use of these easily prepared Ge_1−xSn_x nanoalloys in optoelectronic devices. Full article

According to European regulations, indium and germanium are critical metals. Therefore, their recovery is a crucial issue. The present study was focused on the pyrometallurgical treatment of polymetallic PbSnIn and PbSnCuGeIn generated at the Miasteczko Zinc Smelter in order to recover In and Ge. The paper presents the production process of these alloys, as well as their characteristics. The materials were subjected to thermal processing in a laboratory-scale refining kettle fired with natural gas and air. Two different methods for the processing of the individual alloys are described. Two series (one for each material) consisting of five tests were performed in order to determine the optimal metal recovery parameters. The described pyrometallurgical process resulted in the production of an indium-enriched semi-product (In—1.15%) and a Ge–In-enriched product (Ge—11.1%, In—3.0%). Direct indium recovery rates were approximately 83% and >99%, respectively. Full article

The accurate determination of the thermoelectric properties of a material becomes increasingly difficult as the temperature rises. However, it is the properties at elevated temperatures that are important if thermoelectric generator efficiency is to be improved. It is shown that the dimensionless figure of merit, ZT, might be expected to rise with temperature for a given material provided that minority carrier conduction can be avoided. It is, of course, also necessary that the material should remain stable over the whole operating range. We show that the prediction of high temperature properties in the extrinsic region is possible if the temperature dependence of carrier mobility and lattice thermal conductivity are known. Also, we show how the undesirable effects arising from mixed or intrinsic conduction can be calculated from the energy gap and the relative mobilities of the electrons and the positive holes. The processes involved are discussed in general terms and are illustrated for different systems. These comprise the bismuth telluride alloys, silicon-germanium alloys, magnesium-silicon-tin and higher manganese silicide. Full article