Search Results (3)

In this study, billets of the ZK30 (Mg-3Zn-0.6 Zr-0.4 Mn, wt%) alloy were Equal Channel Angle Pressing (ECAP) processed for up to four passes of routes Bc (with rotating the sample 90° in the same direction between the subsequent passes), A (without sample rotation), and C (with sample rotating 180°) after each pass at a temperature of 250 °C and a ram speed of 10 mm/min using a die with an internal channel angle of 90°. The microstructural evolution and the crystallographic texture were investigated using a Scanning Electron Microscope (SEM) equipped with the Electron Back-Scatter Diffraction (EBSD) technique. Corrosion measurements were conducted in ringer lactate which is a simulated body fluid. The Vickers microhardness test and tensile tests were conducted for the alloy before and after processing. The as-annealed billets exhibited a bimodal structure as fine grains (more than 3.39 µm) coexisted with almost-equiaxed coarse grains (less than 76.73 µm); the average grain size was 26.69 µm. Further processing until four passes resulted in enhanced grain refinement and full Dynamic Recrystallization (DRX). ECAP processing through 4-Bc, 4-A, and 4-C exhibited significant reductions in grain size until they reached 1.94 µm, 2.89 µm, and 2.25 µm, respectively. Four-pass processing also resulted in the transformation of low-angle grain boundaries into high-angle grain boundaries. The previous conclusion was drawn from observing the simultaneous decrease in the fraction of low-angle grain boundaries and an increase in the fraction of high-angle grain boundaries. The pole figures revealed that 4-Bc, 4-A, and 4-C reduced the maximum texture intensity of the as-annealed billets. The potentiodynamic polarization findings revealed that route Bc is the most effective route in improving the corrosion rate, whereas the Electrochemical Impedance Spectroscopy (EIS) revealed that routes A and Bc improved the corrosion resistance with nearly identical values. Finally, 4-Bc resulted in the highest increase in Vickers hardness, yield stress, and ultimate tensile strength with values of 80.8%, 19.3%, and 44.5%, alongside a 31% improvement in ductility, all compared to the AA condition. Full article

To enhance the computing efficiency in a neuromorphic architecture, it is important to develop suitable memory devices that can emulate the role of biological synapses. More specifically, not only are multiple conductance states needed to be achieved in the memory but each state is also analogously adjusted by consecutive identical pulses. Recently, electrochemical random-access memory (ECRAM) has been dedicatedly designed to realize the desired synaptic characteristics. Electric-field-driven ion motion through various electrolytes enables the conductance of the ECRAM to be analogously modulated, resulting in a linear and symmetric response. Therefore, the aim of this study is to review recent advances in ECRAM technology from the material and device engineering perspectives. Since controllable mobile ions play an important role in achieving synaptic behavior, the prospect and challenges of ECRAM devices classified according to mobile ion species are discussed. Full article

Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window (>10⁶), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology. Full article