Search Results (7)

We report here on the synthesis and characterization of three novel isoindigo (II)-based organic semiconductors. The three dyes are based on an electron acceptor II core, symmetrically linked to two 3-octylthiophene donor rings; this common fragment, easily synthesizable, is end-capped with three different auxiliary electron acceptor groups, 1,1-Dicyanomethylene-3-Indanone (IDM) and two derivatives of it, bearing a bromine atom in position 5 or 6 of the IDM ring. The effect of the bromination and of the position of the bromine atom on the chemical–physical and electrical properties of the compounds were examined by means of thermal, optical, and electrochemical analysis; the electronic properties were investigated in more details at the DFT level. The novel compounds were used as active layers in organic field effect transistors: all the II derivatives were n-type unipolar semiconductors with electron mobilities ranging between 10⁻³ and 10⁻⁴ cm²/V∙s. Full article

Defect annihilation of the IGZO/SiO₂ layer is of great importance to enhancing the bias stress stabilities of bottom-gate coplanar thin-film transistors (TFTs). The effects of annealing temperatures (T_a) on the structure of the IGZO/SiO₂ layer and the stabilities of coplanar IGZO TFTs were investigated in this work. An atomic depth profile showed that the IGZO/SiO₂ layer included an IGZO layer, an IGZO/SiO₂ interfacial mixing layer, and a SiO₂ layer. Higher T_a had only one effect on the IGZO layer and SiO₂ layer (i.e., strengthening chemical bonds), while it had complex effects on the interfacial mixing layer—including weakening M-O bonds (M: metallic elements in IGZO), strengthening damaged Si-O bonds, and increasing O-related defects (e.g., H₂O). At higher T_a, IGZO TFTs exhibited enhanced positive bias temperature stress (PBTS) stabilities but decreased negative bias temperature stress (NBTS) stabilities. The enhanced PBTS stabilities were correlated with decreased electron traps due to the stronger Si-O bonds near the interfacial layer. The decreased NBTS stabilities were related to increased electron de-trapping from donor-like defects (e.g., weak M-O bonds and H₂O) in the interfacial layer. Our results suggest that although higher T_a annihilated the structural damage at the interface from ion bombardment, it introduced undesirable defects. Therefore, to comprehensively improve electrical stabilities, controlling defect generation (e.g., by using a mild sputtering condition of source/drain electrodes and oxides) was more important than enhancing defect annihilation (e.g., through increasing T_a). Full article

Polythiophene, as a class of potential electron donor units, is widely used in organic electronics such as transistors. In this work, a novel polymeric material, PDPPTT-FT, was prepared by incorporating the electron acceptor unit into the polythiophene system. The incorporation of the DPP molecule assists in improving the solubility of the material and provides a convenient method for the preparation of field effect transistors via subsequent solution processing. The introduction of fluorine atoms forms a good intramolecular conformational lock, and theoretical calculations show that the structure displays excellent co-planarity and regularity. Grazing incidence wide-angle X-ray (GIWAXS) results indicate that the PDPPTT-FT is highly crystalline, which facilitates carrier migration within and between polymer chains. The hole mobility of this π-conjugated material is as high as 0.30 cm² V⁻¹ s⁻¹ in organic transistor measurements, demonstrating the great potential of this polymer material in the field of optoelectronics. Full article

To investigate the effect of a side chain on the electrical properties of a conjugated polymer (CP), we designed two different CPs containing alkyl and ethylene glycol (EG) derivatives as side chains on the same conjugated backbone with an electron donor-acceptor (D-A) type chain configuration. PTQ-T with an alkyl side chain showed typical p-type semiconducting properties, whereas PTQ-TEG with an EG-based side chain exhibited electrically conductive behavior. Both CPs generated radical species owing to their strong D-A type conjugated structure; however, the spin density was much greater in PTQ-TEG. X-ray photoelectron spectroscopy analysis revealed that the O atoms of the EG-based side chains in PTQ-TEG were intercalated with the conjugated backbone and increased the carrier density. Upon application to a field-effect transistor sensor for PTQ-T and resistive sensor for PTQ-TEG, PTQ-TEG exhibited a better NO₂ detection capability with faster signal recovery characteristics than PTQ-T. Compared with the relatively rigid alkyl side chains of PTQ-T, the flexible EG-based side chains in PTQ-TEG have a higher potential to enlarge the free volume as well as improve NO₂-affinity, which promotes the diffusion of NO₂ in and out of the PTQ-TEG film, and ultimately resulting in better NO₂ detection capabilities. Full article

Current–voltage characteristics of a quantum dot in double-barrier configuration, as formed in the nanoscale channel of silicon transistors, were analyzed both experimentally and theoretically. Single electron transistors (SET) made in a SOI-FET configuration using silicon quantum dot as well as phosphorus donor quantum dots were experimentally investigated. These devices exhibited a quantum Coulomb blockade phenomenon along with a detectable effect of variable tunnel barriers. To replicate the experimental results, we developed a generalized formalism for the tunnel-barrier dependent quantum Coulomb blockade by modifying the rate-equation approach. We qualitatively replicate the experimental results with numerical calculation using this formalism for two and three energy levels participated in the tunneling transport. The new formalism supports the features of most of the small-scaled SET devices. Full article

The structural alteration of semiconducting polymer backbones can improve the optoelectronic properties of organic semiconductors and enhance field-effect mobilities. In our efforts towards improving the performance of organic field-effect transistors (OFETs), we are reporting a donor–acceptor polymer containing thieno[3,2-b]pyrrole (TP) donor and a furan-flanked diketopyrrolopyrrole (DPP) electron acceptor, which yielded an asymmetric poly(methylthienopyrrolo)furanyl)diketopyrrolopyrrol) P(FDPP-TP) organic semiconducting polymer. The introduction of a furan spacer improved thermally induced crystallinity and molecular packing, as confirmed by grazing incidence X-ray diffraction (XRD) and tapping-mode atomic force microscopy (TMAFM). The tested OFET devices gave maximum hole mobility of 0.42 cm² V⁻¹ s⁻¹ with threshold voltages around 0 V for bottom-gate bottom-contact device configuration. Full article

In this article, we summarize the synthetic approaches developed in our research groups during the last decade to efficiently tune the optical, electrochemical and morphological characteristics of oligothiophene–naphthalimide assemblies. Different variables were tuned in these organic semiconductors, such as the planarity and the length of their π-conjugated backbones, the topology and energy levels of the frontier molecular orbitals (HOMO and LUMO) and their molecular dipole moments. The tuning of these properties can be connected with the microstructure properties observed by atomic force microscopy (AFM) and X-ray diffraction (XRD) in thin films as well as with the performances in organic field-effect transistors (OFETs). The possibility of incorporating these donor-acceptor assemblies into macromolecular structures is also addressed, and some innovative applications for these macromolecular systems, such as the degradation of organic pollutants in aqueous media, are also presented. Full article