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Keywords = delta-doped CCD

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19 pages, 4272 KB  
Article
Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space
by Michael E. Hoenk, April D. Jewell, Gillian Kyne, John Hennessy, Todd Jones, Charles Shapiro, Nathan Bush, Shouleh Nikzad, David Morris, Katherine Lawrie and Jesper Skottfelt
Sensors 2023, 23(24), 9857; https://doi.org/10.3390/s23249857 - 15 Dec 2023
Cited by 19 | Viewed by 3521
Abstract
Radiation-induced damage and instabilities in back-illuminated silicon detectors have proved to be challenging in multiple NASA and commercial applications. In this paper, we develop a model of detector quantum efficiency (QE) as a function of Si–SiO2 interface and oxide trap densities to [...] Read more.
Radiation-induced damage and instabilities in back-illuminated silicon detectors have proved to be challenging in multiple NASA and commercial applications. In this paper, we develop a model of detector quantum efficiency (QE) as a function of Si–SiO2 interface and oxide trap densities to analyze the performance of silicon detectors and explore the requirements for stable, radiation-hardened surface passivation. By analyzing QE data acquired before, during, and after, exposure to damaging UV radiation, we explore the physical and chemical mechanisms underlying UV-induced surface damage, variable surface charge, QE, and stability in ion-implanted and delta-doped detectors. Delta-doped CCD and CMOS image sensors are shown to be uniquely hardened against surface damage caused by ionizing radiation, enabling the stability and photometric accuracy required by NASA for exoplanet science and time domain astronomy. Full article
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