Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 

Saved Queries

Sign in to use this feature.

Search Filter Reset All

Years

Between: -

Subjects

remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
Add Subjects Reset
Select Subjects

Journals

remove_circle_outline
remove_circle_outline
remove_circle_outline
Add Journals Reset
Select Journals

Article Types

remove_circle_outline
Add Article Types Reset
Select Article Types

Countries / Regions

remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
Add Countries / Regions Reset
Select Countries / Regions
Update Search
share announcement

Search Results (3)

Search Parameters:
Keywords = beta-silicon carbide (β-SiC)

Order results
Result details
Results per page
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
12 pages, 8370 KiB  
Article
Preparation of a Flexible X-Band Radar-Wave-Absorbing Composite Material by Using Beta-Silicon Carbide and Polyurethane as Substrates and Multiwalled Carbon Nanotubes as Additives
by Shao-Hwa Hu, Jiao-Jiao Yuan, Hang Dai, Yang-Yang Liu, Jing He and Jun-Ling Tu
Symmetry 2022, 14(10), 2144; https://doi.org/10.3390/sym14102144 - 14 Oct 2022
Cited by 10 | Viewed by 2594
Abstract
Silicon carbide (SiC) has good chemical resistance, excellent mechanical properties, thermal conductivity, especially in extreme conditions of application, and has proved to be a very promising electromagnetic absorption material. However, single silicon carbide cannot meet the increasing demand for high performance of absorbing [...] Read more.
Silicon carbide (SiC) has good chemical resistance, excellent mechanical properties, thermal conductivity, especially in extreme conditions of application, and has proved to be a very promising electromagnetic absorption material. However, single silicon carbide cannot meet the increasing demand for high performance of absorbing materials. It has become an important research direction to combine it with other absorbing materials to improve its absorbing performance. In this study, a composite absorber material was prepared by 50 wt.% micron-sized beta-silicon carbide (β-sic) powder, mixed with a 0.2 wt.% multiwalled carbon nanotubes (MWCNTs) and 50 wt.% polyurethane (PU) substrate. The mixture was stirred and deaerated to form a slurry, and sprayed onto synthetic fabric. The results showed that the composite material was flexible, with a thickness of less than 2 mm and favorable adhesion. The results obtained by reflection graph of the radar waves, indicated that the return loss within the X-band range (8–12 GHz) was less than −40 dB, indicating favorable radar wave absorption. Therefore, composite materials could thus be used successfully as radar wave absorbers, and was suitable for stealth materials in “asymmetric warfare”. Full article
(This article belongs to the Section Chemistry: Symmetry/Asymmetry)
►▼ Show Figures

Figure 1

9 pages, 3798 KiB  
Article
Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter
by Myeong-Cheol Shin, Young-Jae Lee, Dong-Hyeon Kim, Seung-Woo Jung, Michael A. Schweitz, Weon Ho Shin, Jong-Min Oh, Chulhwan Park and Sang-Mo Koo
Materials 2021, 14(5), 1296; https://doi.org/10.3390/ma14051296 - 8 Mar 2021
Cited by 6 | Viewed by 3464
Abstract
In this study, static induction transistors (SITs) with beta gallium oxide (β-Ga2O3) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga2O3 films are subjected to UV/ozone treatment, which results [...] Read more.
In this study, static induction transistors (SITs) with beta gallium oxide (β-Ga2O3) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga2O3 films are subjected to UV/ozone treatment, which results in reduced oxygen vacancies in the X-ray photoelectron spectroscopy data, lower surface roughness (3.51 nm) and resistivity (319 Ω·cm), and higher mobility (4.01 cm2V−1s−1). The gate leakage current is as low as 1.0 × 10−11 A at VGS = 10 V by the depletion layer formed between n-Ga2O3 and p-epi SiC at the gate region with a PN heterojunction. The UV/O3-treated SITs exhibit higher (approximately 1.64 × 102 times) drain current (VDS = 12 V) and on/off ratio (4.32 × 105) than non-treated control devices. Full article
(This article belongs to the Special Issue Physicochemical Properties of Organic and Hybrid Semiconductor Materials)
►▼ Show Figures

Figure 1

24 pages, 74637 KiB  
Article
Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications
by Muhammad Shakir, Shuoben Hou, Raheleh Hedayati, Bengt Gunnar Malm, Mikael Östling and Carl-Mikael Zetterling
Electronics 2019, 8(5), 496; https://doi.org/10.3390/electronics8050496 - 3 May 2019
Cited by 24 | Viewed by 10207
Abstract
A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells. A transistor–transistor logic (TTL)-based PDK gate library [...] Read more.
A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells. A transistor–transistor logic (TTL)-based PDK gate library design will also be discussed with delay, power, noise margin, and fan-out as main design criterion to tolerate the threshold voltage shift, beta ( β ) and collector current ( I C ) variation of SiC devices as temperature increases. The PDK-based complex digital ICs design flow based on layout, physical verification, and in-house fabrication process will also be demonstrated. Both combinational and sequential circuits have been designed, such as a 720-device ALU and a 520-device 4 bit counter. All the integrated circuits and devices are fully characterized up to 500 °C. The inverter and a D-type flip-flop (DFF) are characterized as benchmark standard cells. The proposed work is a key step towards SiC-based very large-scale integrated (VLSI) circuits implementation for high-temperature applications. Full article
(This article belongs to the Section Microelectronics)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying article 1-50 on page 1 of 1.
Back to TopTop